CY14V101QS-SF108XI Allicdata Electronics
Allicdata Part #:

428-3562-5-ND

Manufacturer Part#:

CY14V101QS-SF108XI

Price: $ 10.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC NVSRAM 1M SPI 108MHZ 16SOIC
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 1Mb (128K x 8...
DataSheet: CY14V101QS-SF108XI datasheetCY14V101QS-SF108XI Datasheet/PDF
Quantity: 164
1 +: $ 9.09090
10 +: $ 8.41995
25 +: $ 8.30242
92 +: $ 8.20064
184 +: $ 7.18697
276 +: $ 6.87632
552 +: $ 6.83046
Stock 164Can Ship Immediately
$ 10
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 1Mb (128K x 8)
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: --
Memory Interface: SPI
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is an integral part of many computing systems, providing the capacity needed to store information and programs. The CY14V101QS-SF108XI is an 8 Mbit (1 Meg), asynchronous static random-access memory (SRAM) that provides fast and easy access to any data stored in its memory. It is often used in a variety of high-performance computing applications, such as military and satellite systems, medical instrumentation, and network routers.

The CY14V101QS-SF108XI is designed to offer high speed operations, such as random read/write operations and burst read/write operations. It is also designed to be a high-density memory solution. It is able to store up to 8 Mbits of information, allowing it to store large amounts of data.

The CY14V101QS-SF108XI is a fast memory device, allowing for the rapid retrieval of data. It has a clock frequency of 15ns, making it one of the fastest memories available. It also has a minimum instruction time of 33ns, making it well-suited for high-bandwidth applications. It is also energy-efficient, with a low static power dissipation of 0.15W.

The CY14V101QS-SF108XI\'s working principle is based on static random access memory (SRAM). SRAM is a type of memory technology in which data is stored in static form on integrated circuits. It is a non-volatile memory, meaning that it does not require a constant source of power to retain its memory. SRAM is often used in systems where high-speed access to stored data is important. SRAM is also widely used in embedded systems due to its low power consumption and high-speed operation.

The CY14V101QS-SF108XI is an excellent choice for a wide range of applications due to its fast access time, high density, and low power consumption. It is an ideal solution for military and satellite systems, medical instrumentation, data acquisition systems, and any application that requires fast access to large amounts of data. The CY14V101QS-SF108XI is a reliable and efficient memory solution that is suitable for a variety of high performance applications.

The specific data is subject to PDF, and the above content is for reference

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