SF10DG-T Allicdata Electronics
Allicdata Part #:

SF10DG-T-ND

Manufacturer Part#:

SF10DG-T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE GEN PURP 200V 1A DO41
More Detail: Diode Standard 200V 1A Through Hole DO-41
DataSheet: SF10DG-T datasheetSF10DG-T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Diodes - Rectifiers - SingleBuilding technology and digitalization have driven radical improvements in the efficiency of machines, devices, and equipment. One of the latest advances in this area is the SF10DG-T rectifier, an ultra-small device featuring an optimized working principle and a versatile range of application fields.The SF10DG-T rectifier is a single-die, low-voltage, 25V-rated, silicon carbide (SiC) rectifier with an excellent range of rectification and switching capabilities. This device\'s design is optimized to provide high efficiency, while its size makes it suitable for use in tight spaces and on difficult-to-reach surfaces. The SF10DG-T rectifier is available in surface-mount, through-hole, and two-lead packages for easy mounting, with a thickness of no more than 480-800 microns. Its superior thermal conductivity also allows it to dissipate heat quickly, raising its maximum operating temperature from -55°C to +125°C.The SF10DG-T rectifier\'s circuit configuration exploits the properties of SiC to provide unprecedented performance levels. The device is designed to reduce loss and to produce high-power density levels by using both a fast switching speed and low on-resistance. Its switching frequency can reach up to 50 kHz, enabling a low standby current and reduced power losses during switching. Furthermore, thanks to its fast-switching capabilities and low on-resistance, the device can produce high efficiency levels in systems with light loads, while still maintaining a high share of low-end power.The SF10DG-T\'s superior features make it suited for a vast range of applications, including in motor drives, power supplies, converters, chargers, as well as in renewable energy systems. Moreover, its small size makes it suitable for use in confined, delicate, and energy-sensitive spaces, such as in medical and consumer electronics. The device is also built with a high degree of compliance, allowing it to be easily integrated with existing systems without the need for extra design or rework.The SF10DG-T is a groundbreaking rectifier device with the potential to revolutionise the power industry, especially considering how its size and efficiency can open doors in application fields previously impossible to achieve. With its optimized working principle and wide range of applications, the SF10DG-T can provide a reliable, high-performance, and energy-efficient solution for any system.

The specific data is subject to PDF, and the above content is for reference

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