Allicdata Part #: | SF35GB0G-ND |
Manufacturer Part#: |
SF35G B0G |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 300V 3A DO201AD |
More Detail: | Diode Standard 300V 3A Through Hole DO-201AD |
DataSheet: | SF35G B0G Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.09433 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 300V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 5µA @ 300V |
Capacitance @ Vr, F: | 60pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The SF35G B0G diode is a single, rectifier diode designed to provide reliable and efficient rectification. It has low forward voltage, low reverse leakage current, and high temperature stability. With its high reliability and advanced features, it is widely used in various applications such as power supply, battery charge, solar cell rectifier, automotive, etc.
The SF35G B0G diode is constructed using two regions of N-type and P-type material. The outer region of N-type material is the anode and the inner region of P-type material is the cathode. The intrinsic junction of both materials is known as the depletion region and is responsible for the rectification process. This junction is formed when the electrons from the N-type material are drawn to the P-type material and form a barrier. When a forward voltage is applied to the diode, the current passes through the diode in one direction while blocking current in the opposite direction.
The SF35G B0G diode is designed to handle the maximum current of 25 Amps and a reverse voltage of 600 Volts. It is made up of silicon material, which can withstand temperatures up to 175 ℃. The peak forward voltage is 2.25 to 2.45 V, and the reverse leakage current is 0.1 μA. Its maximum surge current is 50 Amps. It is designed with a standard TO-220 package, which is widely used in many electronic devices.
The working principle of the SF35G B0G diode is simple. When the forward voltage is applied to the diode, the current passes through it in one direction and creates a voltage drop across the diode. This voltage drop creates a potential barrier and the electrons are unable to cross it. When the reverse voltage is applied to the diode, the potential barrier is destroyed and the electrons are able to cross the junction and the current is blocked.
The SF35G B0G diode is widely used in various applications due to its high stability and reliability. It is commonly used in electronic power supplies, battery chargers, solar cell rectifiers, and automotive applications. It can also be used in rectification circuits and AC to DC converters. The SF35G B0G diode is especially suitable for high-duration and low-temperature rectification, due to its high-temperature operating capability.
In conclusion, the SF35G B0G diode is a single rectifier diode widely used in various electronic applications due to its high reliability, high temperature stability, and low leakage current. It is designed with a standard TO-220 package, which is suitable for high-temperature, low-voltage and low-duration rectification. Its simple working principle allows it to be used in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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