Allicdata Part #: | SF35GHR0G-ND |
Manufacturer Part#: |
SF35GHR0G |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 300V 3A DO201AD |
More Detail: | Diode Standard 300V 3A Through Hole DO-201AD |
DataSheet: | SF35GHR0G Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.11422 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 300V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 5µA @ 300V |
Capacitance @ Vr, F: | 60pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Diodes, or semiconductors, are used to rectify, filter and regulate electricity in various applications. Among them is rectification, which involves making the current in the electric circuit flow in one direction. This can be done with a single diodes such as the SF35GHR0G.The SF35GHR0G single diode can be used in industrial, electronic, military and medical electronic fields. It is composed of two different layers of silicon and two different types of isolation layers. It also has two separate cathode and anode pins for the passage of electric current. The anode consists of a semi-conductive material and the cathode consists of doped silicon. It has low forward voltage drop, high voltage and temperature ratings, small power dissipation, and ion implanting. In terms of its working principle, the SF35GHR0G operates by allowing the electric current to flow in one direction. This is due to the dissimilarities between the two layers of the diode. Silicon is a semiconductor, and its movement between its two layers is influenced by the voltage being passed through it. This creates a current buffer, wherein the current only flows one direction. This is why the SF35GHR0G single diode is well-suited for rectifying, filtering and regulating electric currents in various applications. Another advantage of the SF35GHR0G diode is its low forward voltage drop, which means that lower voltages can be used in applications. This makes the diode more efficient, as it will require less energy to perform its function. Additionally, its high voltage and temperature ratings make it more reliable and able to withstand higher operating temperatures. As such, the SF35GHR0G single diode can be used in higher-powered applications. Lastly, the SF35GHR0G also has ion implanting, which is a process used to change the conductivity of the diode. This is done by adding or removing atoms to the diode, which can either increase or decrease its conductivity. This allows the diode to be tailored to meet the requirements of the application in which it is used.Overall, the SF35GHR0G single diode is an excellent choice for rectifying, filtering and regulating electric currents in various applications. It is composed of two different layers of silicon and two different types of isolation layers for efficient conduction. Moreover, it also has a low forward voltage drop, high voltage and temperature ratings, small power dissipation and ion implanting. Thus, the SF35GHR0G single diode can provide reliable power regulation in a variety of scenarios.
The specific data is subject to PDF, and the above content is for reference
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