SF5400-TAP Allicdata Electronics
Allicdata Part #:

SF5400-TAP-ND

Manufacturer Part#:

SF5400-TAP

Price: $ 0.27
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 50V 3A SOD64
More Detail: Diode Standard 50V 3A Through Hole SOD-64
DataSheet: SF5400-TAP datasheetSF5400-TAP Datasheet/PDF
Quantity: 1000
12500 +: $ 0.23814
Stock 1000Can Ship Immediately
$ 0.27
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Description

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Introduction to SF5400-TAP Application Field and Working Principle

SF5400-TAP is a single rectifier diode with a high forward voltage drop and low reverse characteristics. It is designed to provide efficient rectification with superior performance in applications such as voltage regulation, power supply, inverter and amplifier applications. This diode has a reverse breakdown voltage of up to 55V, with a rated forward current of up to 1.5A. SF5400-TAP single rectifier diodes offer excellent performance in a wide range of applications.

SF5400-TAP Application Field

The SF5400-TAPsingle rectifier diode is ideally suited for DC power applications, as its reverse breakdown voltage of up to 55V make it suitable for use in wide variety of DC supply applications. The diode can also be used in applications such as voltage regulation, power supply, inverter and amplifier applications, giving excellent performance in those applications.

SF5400-TAP Working Principle

The working principle of SF5400-TAP single rectifier is based on the PN junction diode principle. A PN junction is formed when a P-type and N-type semiconductor material are in contact with each other. When a voltage is applied on the PN junction, electrons and holes move in opposite directions, and a depletion zone is formed at the junction. This depletion zone acts as an electrical barrier, preventing any current from flowing through the junction. When a forward voltage is applied across the diode, it causes the depletion zone to reduce in size and current starts flowing through the diode. The diode\'s capacity for conducting current is dependent on its forward voltage.

The reverse breakdown voltage of the SF5400-TAP is determined by the width of the depletion layer and the applied reverse voltage. As the reverse voltage is increased, the depletion layer thickness decreases, eventually allowing for a high current to flow through the diode in a reverse direction. This phenomenon is also known as reverse breakdown. In this state, the diode is said to be in a breakdown mode. The reverse breakdown voltage of the SF5400-TAP is 55 Volts.

The forward voltage drop of the SF5400-TAP is relatively low compared with other rectifier diode types, ranging from 0.7 volts to 1.5 volts. The low forward voltage drop ensures efficient rectification, resulting in a higher power output with less heat generation in the diode.

Conclusion

The SF5400-TAP is a single rectifier diode suitable for a wide range of DC power applications, with a reverse breakdown voltage of up to 55Volts and a forward voltage drop ranging from 0.7 volts to 1.5 volts. The diode offers excellent performance in applications such as voltage regulation, power supply, inverter and amplifier applications. Therefore, the SF5400-TAP is a suitable device for many power conversion and rectification applications.

The specific data is subject to PDF, and the above content is for reference

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