
Allicdata Part #: | SF5408-TAPGITB-ND |
Manufacturer Part#: |
SF5408-TAP |
Price: | $ 0.65 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 1KV 3A SOD64 |
More Detail: | Diode Standard 1000V 3A Through Hole SOD-64 |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.65000 |
10 +: | $ 0.63050 |
100 +: | $ 0.61750 |
1000 +: | $ 0.60450 |
10000 +: | $ 0.58500 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 75ns |
Current - Reverse Leakage @ Vr: | 5µA @ 1000V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | SOD-64, Axial |
Supplier Device Package: | SOD-64 |
Operating Temperature - Junction: | -55°C ~ 175°C |
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The SF5408-TAP is a single-phase rectifier diode. It is a single-piece unit used in power applications such as DC-DC converters, voltage regulators, uninterruptible power systems, and motor controls. It is one of the most common rectifier diodes and is used in a variety of different applications.
Introduction to SF5408-TAP
The SF5408-TAP is a planar semiconductor device that uses a single silicon carbide (SiC) chip as the rectifying element. The design of the diode has been optimized for high forward current, low reverse leakage current, and fast switching applications. It features high breakdown voltages in the forward and reverse direction, typically ranging from 200 to 600V. The device can withstand high transient voltages, as well as pulse and surge current. The design also allows for a wide temperature range and low power consumption, making it suitable for use in automotive applications and other power sensitive applications.
Working Principle of SF5408-TAP
The working principle of the SF5408-TAP is based on the principle of p-n junction. The p-n junction is formed when two semiconductor materials - a p-type material and an n-type material - are brought into contact. In this case, the n-type material is silicon, while the p-type material is silicon carbide. This p-n junction is the basic element of a rectifying diode. When a forward bias voltage is applied across the junction, electrons move from the n-type silicon to the p-type silicon carbide, resulting in a current flow across the junction and the diode being in the “on” state.
When a reverse bias voltage is applied across the junction, electrons move from the p-type silicon carbide to the n-type silicon, resulting in a current flow across the junction in the opposite direction. This results in the diode being in the “off” state. The SF5408-TAP is irreversible, meaning that it can only be used in one direction, allowing it to filter and control the flow of current through a circuit.
Applications of SF5408-TAP
The SF5408-TAP has a wide range of applications due to its high electrical performance and low-power consumption. It can be used in a variety of power electronics applications, such as DC-DC converters and voltage regulators. It is also often used in uninterruptible power systems, motor control systems, and automotive applications. The diode can be used to convert AC power to DC, to bridge gaps in resistance, and to control and filter the current flow. It is also often used to regulate the load current in switch mode power supplies, as well as to protect circuits against overcurrent, overvoltage and reverse polarity events.
Conclusion
The SF5408-TAP is a single-piece rectifier diode that uses a single SiC chip as the rectifying element. It is irreversible, meaning that it can only be used in one direction. It has a wide range of applications due to its high electrical performance and low-power consumption. It can be used in a variety of power electronics applications, such as DC-DC converters and voltage regulators, as well as in uninterruptible power systems, motor control systems, and automotive applications. The design of the diode has been optimized for high forward current, low reverse leakage current, and fast switching applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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