SGD02N120BUMA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SGD02N120BUMA1 is one of the many IGBT single transistors available in the electronic components industry. This transistor is special because of its highly versatile application and excellent performance.

An IGBT (Insulated Gate Bipolar Transistor) is a three-terminal power semiconductor device. It combines the best features of both bipolar and MOSFET (metal-oxide semiconductor field-effect transistor) technologies, making it suitable for use in a wide range of applications such as industrial motor control, high-efficiency motor drives, light dimming systems, and solenoid control.

The SGD02N120BUMA1 is a Single IGBT designed for moderate to high power applications. It is fabricated on a highly reliable Fast Soft-Recovery Diode (FSR) technology. This transistor offers low switching losses, soft-overshoot recovery, low EMI, and minimal noise. With a Low VCE(sat) of 1.7V and a Low VF of 0.8V, this transistor is designed to reduce system costs. The transistor can handle up to 120A continuous current and up to 17A short-circuit current.

The SGD02N120BUMA1 Transistor\'s main uses are in motor control, renewable energy, and solar applications. The transistor allows for higher frequency control for motor drives and solar conversion, resulting in better efficiency and performance. The transistor is also used in EV motor drives and high-efficiency motor drives with low noise, minimal overshoot, and lower operation temperatures. It can be used for AC motor control such as fan or motor switching and for DC motor control such as wind turbines or electric vehicle motor drives.

As for the working principle, the SGD02N120BUMA1 transistor combines the simpleness of a MOSFET and the high input capacitance of a Bipolar transistor. This configuration allows the transistor to serve as a fast switching and high-power switch, providing fast switching times and higher performance. The transistor is designed with an insulated gate, allowing control of current flow through the transistor. The substantial input capacitance acts as a break, switching off the transistor when the input voltage is removed.

The SGD02N120BUMA1 transistor is designed to serve as a high-efficiency and low-noise switching device. The low input capacitance combined with the low VCE(sat) and low VF allows for fast switching and increased performance. The transistor is also designed for minimal noise and minimal overshoots, making it suitable for use in renewable energy and motor control applications.

The specific data is subject to PDF, and the above content is for reference