SGD02N60BUMA1

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The SGD02N60BUMA1 is part of the range of N- channel trench Gate MOSFETs manufactured by Sano Semi. It is an integrated gate-commuted thyristor (IGBT) that utilizes a single N-channel MOSFET as the input switch and a diode rectifying thyristor as the output switch.

The SGD02N60BUMA1 is designed for applications requiring a high level of reliability and efficiency, such as UPS systems, DC-DC converters, and general-purpose power supplies. The device is available in both TO-220F and SMG packages, enabling it to be used in a variety of applications. It is designed for a maximum junction temperature of 150°C and is capable of withstanding a peak working voltage of 4.5KV.

The working principle of the SGD02N60BUMA1 is based on the combination of the MOSFET and thyristor switches, which are referred to as an ‘input-output switch’. When the gate voltage of the MOSFET switch is applied, the current flow through the device is quickly and efficiently conducted through the output. This is due to the high gain of the MOSFET switch and the low voltage drop of the thyristor switch. As the input gate voltage is removed, the current conducting path through the device is quickly reversed, resulting in an output voltage and current collapse.

The SGD02N60BUMA1 is a highly efficient power device, offering low on-state losses and minimized switching losses. It is available in both discrete and integrated forms, allowing it to be used in a variety of application settings. The device is also capable of operation at high switching frequencies, making it suitable for use in high-frequency circuits. Additionally, the device has a low leakage current, ensuring a high level of safety.

The SGD02N60BUMA1 is capable of handling high power levels and long switching cycles, making it ideal for use in harsh conditions such as high temperatures. Additionally, the device is designed for ease of installation, requiring just a single gate connection to operate. This makes the device suitable for both hardwired and low-cost PCB applications. The device has a wide range of benefits, including a high level of thermal performance, low power consumption, and fast switching.

The SGD02N60BUMA1 is an ideal choice for applications requiring high levels of reliability, efficiency, and safety. The device provides a high degree of flexibility for both power distribution and management applications, enabling it to be used in a wide variety of application settings. The device is capable of withstanding high peak voltages and temperatures, and its low leakage current ensures a high level of safety. Additionally, the device offers low on-state losses and minimized switching losses, making it an ideal choice for power conversion applications.

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