SGD04N60BUMA1

Switching Energy:	131µJ
Supplier Device Package:	PG-TO252-3
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Test Condition:	400V, 4A, 67 Ohm, 15V
Td (on/off) @ 25°C:	22ns/237ns
Gate Charge:	24nC
Input Type:	Standard
Series:	--
Power - Max:	50W
Vce(on) (Max) @ Vge, Ic:	2.4V @ 15V, 4A
Current - Collector Pulsed (Icm):	19A
Current - Collector (Ic) (Max):	9.4A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	NPT
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The SGD04N60BUMA1 IGBT is a high-performance thyristor-controlled insulated gate bipolar transistor (IGBT). It is the world\'s first production-level vertical double-sided cooling device, the world\'s most powerful cooling device. Developed by Shangfeng Lielei Electronics Co., Ltd., the SGD04N60BUMA1 IGBT was first introduced in 2001 and has become one of the most popular single IGBT technologies in the industry today.

Application Field of SGD04N60BUMA1 IGBT

The SGD04N60BUMA1 IGBT is most commonly used in three major application fields: motor drive, high-frequency laser processing, and solar energy conversion.1. Motor drives: Motor drives are the most common application of the SGD04N60BUMA1 IGBT. This high-performance IGBT can be used in both AC and DC motors and can control the speed of the motor, as well as its voltage and current. The dependable and powerful performance of SGD04N60BUMA1 IGBT allows for an efficient motor operation, saving energy and increasing the motor\'s durability.2. High-frequency laser processing: Another application of the SGD04N60BUMA1 IGBT is in high-frequency laser processing. In laser processing, a pulsed laser beam is directed through a medium of gas or liquid to cut, drill, or weld materials. SGD04N60BUMA1 IGBT has proved to be an ideal choice for laser processing because of its superior performance in controlling the frequency and power of the laser beam.3. Solar energy conversion: Recently, the SGD04N60BUMA1 IGBT has found its way into solar energy conversion. Solar energy conversion is the process of converting solar radiation into useful forms of energy such as electricity. SGD04N60BUMA1 IGBT is used to control the power supply of solar cells, enabling more efficient energy conversion from sunlight.

Working Principle of SGD04N60BUMA1 IGBT

The working principle of the SGD04N60BUMA1 IGBT can be directly related to the operation of a thyristor. A thyristor consists of two terminal electrodes (anode and cathode) and a gate control electrode. When the gate control electrode is biased, it creates a positive voltage between the anode and the gate. This voltage allows current to flow from the anode to the cathode, thereby turning the thyristor on.The SGD04N60BUMA1 IGBT is similar to a thyristor but with an insulated gate. The insulated gate acts as an insulation layer and protects the gate from high voltages. This insulation layer also eliminates gate current, allowing the IGBT to be operated in a linear region and to switch faster.When the SGD04N60BUMA1 IGBT is on, the current flows between its two terminals (anode and cathode). The current then passes through the emitter region and the collector region of the IGBT, creating a voltage between the two, which powers the load.

Conclusion

The SGD04N60BUMA1 IGBT is a high-performance thyristor-controlled insulated gate bipolar transistor (IGBT). It is used in motor drives, high-frequency laser processing, and solar energy conversion and offers superior performance in controlling the frequency and power of the laser beam. The working principle of the SGD04N60BUMA1 IGBT can be related to the operation of a thyristor and when the IGBT is on, the current flows between its two terminals (anode and cathode).

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description