SI8233BD-D-IS Allicdata Electronics
Allicdata Part #:

SI8233BD-D-IS-ND

Manufacturer Part#:

SI8233BD-D-IS

Price: $ 2.12
Product Category:

Isolators

Manufacturer: Silicon Labs
Short Description: DGTL ISO 5KV 2CH GATE DVR 16SOIC
More Detail: 4A Gate Driver Capacitive Coupling 5000Vrms 2 Chan...
DataSheet: SI8233BD-D-IS datasheetSI8233BD-D-IS Datasheet/PDF
Quantity: 3697
1 +: $ 2.12000
10 +: $ 2.05640
100 +: $ 2.01400
1000 +: $ 1.97160
10000 +: $ 1.90800
Stock 3697Can Ship Immediately
$ 2.12
Specifications
Rise / Fall Time (Typ): 12ns, 12ns (Max)
Approvals: CQC, CSA, UR, VDE
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9.4 V ~ 24 V
Voltage - Forward (Vf) (Typ): --
Current - Peak Output: 4A
Current - Output High, Low: 2A, 4A
Series: Automotive, AEC-Q100
Pulse Width Distortion (Max): 5.6ns
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Common Mode Transient Immunity (Min): 20kV/µs
Voltage - Isolation: 5000Vrms
Number of Channels: 2
Technology: Capacitive Coupling
Part Status: Active
Packaging: Tube 
Description

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The Si8233BD-D-IS is a high-performance digital isolator in the form of a gate driver. Specifically, it is part of a series of digital isolators that enables devices to communicate without direct electrical contact. It grants device compatibility across different power supply levels, meaning that devices operating on different levels of power supplies can exchange signals without damaging one another. Furthermore, it eliminates the need for external emitter-coupling circuits or for integrated-circuit (IC) level shifters, resulting in a compact, efficient design that does not require any external components.

The Si8233BD-D-IS can bridge two power domains of up to five kVrms, and works in both unipolar and bipolar mode. Apart from providing isolation between two power domains, it also provides electromagnetic interference (EMI) protection, allowing the device to operate even in areas with high levels of EMI. It has a dynamic response amplifier that can effectively regulate the transmission speed for high-speed signal isolation, which can be as fast as 200 MHz data rates. The device includes a precharge circuit, which can ensure safe and reliable startup. Its fault protection feature can also detect any source faults and signal any errors with high accuracy. Additionally, it offers a logic level pulse that acts as a wake-up signal for other isolated circuits.

The Si8233BD-D-IS gate driver is based on a SOI (silicon-on-insulator) technology. To put it simply, SOI technology is an advanced manufacturing process that utilizes a thin-film insulator to separate components on a monolithic die. This separation ensures that the device is much more resistant to semiconductor failures caused by radiation and high temperature, making it an ideal choice for applications in down-hole oil exploration, aerospace, and other high-voltage applications.

In terms of operation, the Si8233BD-D-IS uses a controlled output power MOSFET to achieve reliable low-distortion electrical isolation. It is also designed to minimize not only time-delayed distortion between the sender and receiver circuits but also the signal magnitude distortion. The device has an internal control logic that converts the isolated DC input signals into convenient logic levels, and it also ensures that the isolated power level is within the required range. It is also designed to minimize turn-on and turn-off times, allowing for faster start up and shut down of the circuit.

The Si8233BD-D-IS gate driver is an ideal choice for applications requiring high-performance isolation. Its SOI technology provides reliable communication between two power domains, with minimal distortion and quick response times. Furthermore, its fault protection feature ensures safe startup and shutdown, while its robust logic level pulse allows for reliable wake-up of other isolated circuits.

The specific data is subject to PDF, and the above content is for reference

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