SI8261ABD-C-IMR

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Isolators are essential components in many applications, providing electrical isolation between circuits. The SI8261ABD-C-IMR is an isolated power amplifier and gate driver with an integrated LED. It provides galvanic isolation of up to 5000 Vrms and is designed to drive MOSFET, IGBT, and/or bipolar transistor gates with optimal switching characteristics. This device is suitable for a wide range of regulated and unregulated power supplies for powering DCDC converters.

Application Field

The SI8261ABD-C-IMR is a versatile, rugged isolator suitable for a variety of applications, including telecom and industrial automation, solar power, automotive, and energy conversion systems. The device features a 10 kHz – 1 MHz switching frequency range and can operate from -40°C to 105°C, making it suitable for many industrial and automotive applications. The device also features low on-resistance, over-voltage protection, blue LED power indicator, and various safety and isolation features.

Working Principle

The SI8261ABD-C-IMR provides isolation between the input and output circuits via a transformer and galvanic isolation. The transformer consists of two coils: a primary and a secondary. The input signal is fed to the primary coil, which induces a voltage in the secondary coil, thus providing electrical isolation. The SI8261ABD-C-IMR also includes active components (MOSFETs and diodes) which act as a power amplifier and buffer for the secondary coil. A power-up resistor and diode are used to protect the circuit, and the gate signal is driven via a half-bridge driver. The device also features a fault flag output status to indicate when the fault condition exists.

The SI8261ABD-C-IMR is also designed with short-circuit, over-current, and over-temperature protection. The over-current protection will limit the output current during a fault, thereby protecting both the input and output circuitry from damage. The over-temperature protection will provide thermal shutdown if the transformer core temperature exceeds the specified limit. The SI8261ABD-C-IMR also features high common-mode transient immunity of 1kV/μs.

Conclusion

The SI8261ABD-C-IMR is an integrated power amplifier and gate driver with an integrated LED. It provides galvanic isolation of up to 5000 Vrms and is designed to drive MOSFET, IGBT, and/or bipolar transistor gates with optimal switching characteristics. This device is suitable for a wide range of regulated and unregulated power supplies for powering DCDC converters. The SI8261ABD-C-IMR is also designed with short-circuit, over-current, and over-temperature protection, as well as high common-mode transient immunity of 1kV/μs.

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