
Allicdata Part #: | SI8235AB-C-ISR-ND |
Manufacturer Part#: |
SI8235AB-C-ISR |
Price: | $ 0.00 |
Product Category: | Isolators |
Manufacturer: | Silicon Labs |
Short Description: | DGTL ISO 2.5KV GATE DRVR 16SOIC |
More Detail: | 4A Gate Driver Capacitive Coupling 2500Vrms 2 Chan... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Rise / Fall Time (Typ): | 12ns, 12ns (Max) |
Approvals: | CQC, CSA, UR, VDE |
Supplier Device Package: | 16-SOIC |
Package / Case: | 16-SOIC (0.295", 7.50mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 125°C |
Voltage - Supply: | 6.5 V ~ 24 V |
Voltage - Forward (Vf) (Typ): | -- |
Current - Peak Output: | 4A |
Current - Output High, Low: | 2A, 4A |
Series: | Automotive, AEC-Q100 |
Pulse Width Distortion (Max): | 5.6ns |
Propagation Delay tpLH / tpHL (Max): | 60ns, 60ns |
Common Mode Transient Immunity (Min): | 20kV/µs |
Voltage - Isolation: | 2500Vrms |
Number of Channels: | 2 |
Technology: | Capacitive Coupling |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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Isolators - Gate Drivers
The SI8235AB-C-ISR is an isolated gate driver designed for MOSFETs and IGBTs isolated applications. It consists of two independent drivers, each with an adjustable dead-time and a wide range of impulses and integrated self-protection features. The device is available in a 6-pin TSSOP package and provides 825Vrms of isolation.
Application Field
The SI8235AB-C-ISR is designed for driving MOSFETs and IGBTs in high voltage isolated applications. It is particularly useful in applications that require high switching speeds, tight pulse widths, and the ability to handle very large current load spikes. Examples of applications where the SI8235AB-C-ISR can be used include motor drives, motor controllers, power inverters, solenoid drivers, DC-DC converters, UPS systems, and switch-mode power supplies.
Working Principle
The SI8235AB-C-ISR is an isolated gate driver that provides dual independent outputs. Each output consists of a single inversion MOSFET or IGBT, allowing the device to drive two power switches independently with its bidirectional outputs. The outputs are configurable for either direct or inverse switching control, allowing the user to tailor operation to meet their application needs. The device also features adjustable dead-time, which is adjustable up to 80 ns, and an integrated soft-start function that reduces the current stress on the power switch.
The drivers of the SI8235AB-C-ISR have a wide range of impulses that match the turn-on and turn-off needs of modern power semiconductor devices. The integrated self-protection features, such as short-circuit protection and over-temperature protection, optimize the driver’s functionality and ensure that the system is always protected against damage.
The SI8235AB-C-ISR also features adjustable dead-time and precise matching of rising and falling edges of the outputs to reduce crossover losses. It has a large number of EMI filters for EMI/RFI protection and is designed to support a wide range of supply voltages for enhanced system flexibility.
Conclusion
The SI8235AB-C-ISR is a highly reliable and robust isolated gate driver that is suitable for driving high voltage MOSFETs and IGBTs in a wide range of high power applications. With its adjustable dead-time, wide range of impulses, and a built-in EMI filter, the SI8235AB-C-ISR provides high-performance, reliable, and cost-effective gate driving for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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