SI8281CC-IS

Rise / Fall Time (Typ):	5.5ns, 8.5ns
Approvals:	CQC, CSA, UL, VDE
Supplier Device Package:	20-SOIC
Package / Case:	20-SOIC (0.295", 7.50mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 125°C
Voltage - Supply:	2.8 V ~ 5.5 V
Voltage - Forward (Vf) (Typ):	--
Current - Peak Output:	4A
Current - Output High, Low:	2.5A, 3A
Series:	Automotive, AEC-Q100
Pulse Width Distortion (Max):	5ns
Propagation Delay tpLH / tpHL (Max):	50ns, 50ns
Common Mode Transient Immunity (Min):	35kV/µs
Voltage - Isolation:	5000Vrms
Number of Channels:	1
Technology:	Capacitive Coupling
Part Status:	Active
Packaging:	--

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI8281CC-IS is a high-speed, strong drive non-inverting level-shifter gate driver module designed specifically for applications in the isolation amplifiers and gate driver fields. It is based on a Sineamod technology and is a single-chip CMOS isolated gate driver. It works by utilizing a Si-based dual drive design and a built-in isolation circuit to provide a high level of isolated signal switching.The SI8281CC-IS features a low electromagnetic interference (EMI) design to reduce EMI noise that could interfere with other devices. It also features a fast switching response time, low power consumption, and a wide operating voltage range of 1.8V to 5.5V. Additionally, it has an integrated Protection Circuitry that provides protection against over-currents, over-voltages, short circuits, and reverse voltage conditions.The SI8281CC-IS is ideal for applications such as isolating audio amplifiers, low-side gate drivers, power amplifiers, voltage regulators, and other high-frequency switching applications. Additionally, it can be used to drive mosfets for high-speed signal switching in high-power audio systems, switching regulators, power supplies, and other complex systems.The SI8281CC-IS has a built-in CMOS isolated gate driver circuitry that is designed to provide reliable and fast switching. The gate driver ic circuit includes a low-impedance NMOSFET switch, an inverting optocoupler, and a wide operating voltage range of 6V to 18V. It is capable of delivering up to 10 A RMS current with a maximum voltage of 20V.The SI8281CC-IS is also designed with an optional hysteresis and de-bounce circuitry, which allows it to provide accurate level shifting for high-frequency signals. It also features an adjustable gate drive current so that it can be set to the most appropriate levels for different applications.The SI8281CC-IS offers an optimal combination of features and performance that make it an ideal solution for applications in the isolation amplifiers and gate driver fields. It has a robust and reliable design, and offers reliable, fast, and reliable signal switching with low EMI noise. Furthermore, it is also cost-effective and provides excellent protection against over-currents, over-voltages, and reverse voltage conditions. The SI8281CC-IS is the ideal choice for any application that requires reliable, robust level shifting and signal isolation.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description