SI8261AAD-C-IMR

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Isolators are required to provide electrical isolation between two or more circuits in order to protect the circuits from high voltages, transients, and other hazardous conditions. The SI8261AAD-C-IMR is a type of isolator that is designed to act as a gate driver for bridge circuits and other electronics requiring isolation. This isolator is a mono-polar device designed for industry and consumer applications where case temperature ranges from 40°C to 85°C. This article aims to provide an overview of the application field and working principle of the SI8261AAD-C-IMR isolator.

Applications of the SI8261AAD-C-IMR Isolator

The SI8261AAD-C-IMR is a gate driver with a peak isolation voltage of 800V and a rated power dissipation of 2.5 W, making it suitable for a wide variety of application fields. It is used for high-speed switching, power separation, medical applications, and more. It can be used to drive MOSFETs, IGBTs, and other bridge circuits. Furthermore, its isolation feature makes it an ideal choice for safety applications where stringent isolation requirements are necessary.

The SI8261AAD-C-IMR can also be used in lighting applications, such as LED lighting and automotive lighting. It has a low on-resistance (RDSon) of 240 mOhm, which ensures lower power consumption and improved efficiency for LED applications. Additionally, it has an extremely low output charge, which significantly reduces the power required to drive the LED circuit.

Working Principle of the SI8261AAD-C-IMR Isolator

The SI8261AAD-C-IMR isolator is a high-voltage, high-speed switching device that utilizes patent pending HV GaN technology. This technology enables the isolator to achieve higher speeds and lower power consumption than other isolators. The SI8261AAD-C-IMR operates by converting DC voltage input into a high-frequency ac waveform. This waveform is then transferred across an optical isolation barrier to a secondary circuit. The device then converts the waveform back into DC output and regulates it to the required voltage level. This process is done in a matter of nanoseconds, allowing for higher-speed switching and improved efficiency.

The SI8261AAD-C-IMR also has superior noise immunity, which is due to its patented EMI shielding technology that prevents interference from outside EMI sources. The shielding technology also protects against high-frequency oscillations and eliminates spurious fire signals, ensuring safe and reliable operation of the device. Furthermore, its input/output power is isolated and can be set at a specific level by using its built in power control.

Conclusion

The SI8261AAD-C-IMR is a high-voltage, high-speed gate driver isolator that is suitable for a wide range of applications. Its use of HV GaN technology and EMI shielding technology enables it to achieve higher speeds and lower power consumption than other isolators. Additionally, its input/output power is isolated and can be controlled with the built in power control. This makes the SI8261AAD-C-IMR one of the best solutions for isolating and controlling high voltage, high speed circuits.

The specific data is subject to PDF, and the above content is for reference