SI8261BBC-C-IP

Current - Output High, Low:	500mA, 1.2A
Approvals:	CQC, CSA, UR, VDE
Supplier Device Package:	8-DIP Gull Wing
Package / Case:	8-SMD, Gull Wing
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 125°C
Voltage - Supply:	9.4 V ~ 30 V
Current - DC Forward (If) (Max):	30mA
Voltage - Forward (Vf) (Typ):	2.8V (Max)
Current - Peak Output:	4A
Series:	Automotive, AEC-Q100
Rise / Fall Time (Typ):	5.5ns, 8.5ns
Pulse Width Distortion (Max):	28ns
Propagation Delay tpLH / tpHL (Max):	60ns, 50ns
Common Mode Transient Immunity (Min):	35kV/µs
Voltage - Isolation:	3750Vrms
Number of Channels:	1
Technology:	Capacitive Coupling
Part Status:	Active
Packaging:	Tube

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Isolators - Gate Drivers

The SI8261BBC-C-IP is an isolated gate driver module designed for high-current applications. It is part of the Gate Drivers family from Vishay, which is a leading manufacturer of high-performance integrated circuit products. The SI8261BBC-C-IP is an ideal solution for driving high-power Field Effect Transistors (FETs) used in a variety of digital systems, such as motor controllers and power conversion systems. The device’s feature set and I/O requirements are optimized for high-current applications. The SI8261BBC-C-IP has a wide operating voltage range of 3V to 18V and is capable of driving up to 12A of DC current. The low-quiescent current of the device helps minimize power losses during operation and reduce heat dissipation. The SI8261BBC-C-IP also has embedded functions for short-circuit protection, overtemperature management, and dynamic dead-time control. These features make the device suitable to drive high-current FETs in wide temperature ranges. In addition, the SI8261BBC-C-IP supports a wide voltage range input signal as well as automatic switchover between different voltage levels. This provides the flexibility to quickly adapt the device to various applications. The SI8261BBC-C-IP integrates many key features which help to reduce the overall size, board complexity, and cost of a system. With a wide operating voltage range, the SI8261BBC-C-IP can be embedded into virtually any power system. Its integrated protection and management features provide an additional layer of protection in various applications, requiring no special coding or circuit modification. This makes the device highly versatile in its use.The device also includes non-volatile memory (NVM) which can be used to store and recall various user-defined parameters. This makes it possible to customize the performance of the device on the fly. The SI8261BBC-C-IP is also compatible with other Vishay devices, enabling combinations and multiple-level isolation. This allows for a higher level of reliability in applications that require multiple levels of protection.The SI8261BBC-C-IP is an ideal solution for driving higher-current FETs in power conversion, motor control, and other power electronic systems. The device provides reliable performance in a small form factor, reducing overall system costs and board complexity. With a wide operating voltage range and enhanced embedded protection, the SI8261BBC-C-IP is suitable for high-temperature and high-current applications. The integrated memory makes it possible to quickly customize the device’s behavior for different applications. Additionally, the device is compatible with other Vishay products for multiple-level isolation, allowing for a more reliable system.

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