SIA777EDJ-T1-GE3 Allicdata Electronics
Allicdata Part #:

SIA777EDJ-T1-GE3-ND

Manufacturer Part#:

SIA777EDJ-T1-GE3

Price: $ 0.16
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N/P-CH 20V/12V SC70-6L
More Detail: Mosfet Array N and P-Channel 20V, 12V 1.5A, 4.5A 5...
DataSheet: SIA777EDJ-T1-GE3 datasheetSIA777EDJ-T1-GE3 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.15160
Stock 1000Can Ship Immediately
$ 0.16
Specifications
Series: TrenchFET®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V, 12V
Current - Continuous Drain (Id) @ 25°C: 1.5A, 4.5A
Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: --
Power - Max: 5W, 7.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Supplier Device Package: PowerPAK® SC-70-6 Dual
Description

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SIA777EDJ-T1-GE3 is a type of discrete semiconductor device that is designed to provide superior performance in the most demanding applications. It is an MOSFET array, the product of an advanced design process that combines technology from different fields. SIA777EDJ-T1-GE3 is built with a combination of Silicon and Germanium to achieve high power needs and low power consumption, in addition to providing excellent quality and performance at extreme temperatures.As an MOSFET array, SIA777EDJ-T1-GE3 is a discrete semiconductor device that consists of several transistors connected in parallel to form an array. Each transistor within the array is a P-channel MOSFET, meaning it is composed of two inverters connected together. By connecting multiple transistors in parallel, the array yields higher current handling capabilities, allowing more current to be passed through the array than with a single transistor. This increased current handling makes the SIA777EDJ-T1-GE3 well-suited for applications such as motor control, power conversion, and logic gate control.The working principle of an MOSFET is simple: when current is applied through the gate, it switches on the transistor. The gate voltage, and the resistance of the channel between the drain and the source, determine the amount of current that flows through the transistor. Since the gate is controlled by the voltage, high or low voltages will cause the MOSFET to switch on or off, allowing the user to control the current that passes through the device and, therefore, the speed and power of the connected device.The SIA777EDJ-T1-GE3 is an exceptionally high-performance MOSFET array that offers superior performance in the most demanding applications. In addition to its increased current handling capabilities, the array also features extremely low total gate charge, low input capacitance, and low output resistance. All of these features give it an advantage over other MOSFET arrays. Furthermore, the device is highly integrated and can be used in low-profile designs, which allows for greater design flexibility and cost-savings for the user.The SIA777EDJ-T1-GE3 is designed for use in many applications, from consumer electronics and power management to industrial automation and motor control. Its increased current handling capabilities, low total gate charge, low input capacitance, and low output resistance make it ideal for use in power conversion, motor control, logic gate control, and other demanding applications. In addition, its integrated design allows for greater flexibility and cost-savings when designing products.In summary, the SIA777EDJ-T1-GE3 is a highly advanced MOSFET array that offers superior performance in the most demanding applications. Its features make it ideal for use in power conversion, motor control, logic gate control, and other demanding applications. Its integrated design also allows for greater flexibility and cost-savings when designing products. The SIA777EDJ-T1-GE3 is an excellent choice for those who need a reliable and high-performance discrete semiconductor device.

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