SIRB40DP-T1-GE3

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SIRB40DP-T1-GE3 is a array of N-channel MOSFETs manufactured by Vishay Siliconix, designed for applications requiring low on-state resistance and up to 40V (drain to source) blocking voltage. This MOSFET array is an ideal choice for a variety of applications, such as DC-DC converters, motor controllers, power management, and switch mode applications.

Application Field

The SIRB40DP-T1-GE3 is suitable for applications requiring low current conduction and fast switching speeds. The device features low on-state resistance, which helps reduce power losses during conduction. This is ideal for applications such as DC-DC converters and motor controllers where efficiency is important. It also features a maximum drain-source blocking voltage of up to 40V, which makes it suitable for switch mode applications.

The SIRB40DP-T1-GE3 can also be used as a voltage regulator in designs where accuracy is critical. It has a built-in kickback diode, which helps protect the gate from voltage transients that may occur during switching. It also features an integrated gate-to-source reverse voltage protection, making it highly robust and reliable for a variety of applications.

Working Principle

The SIRB40DP-T1-GE3 is a N-channel enhancement-mode MOSFET array. It consists of four power MOSFETs in a single integrated package. Each of the four power MOSFETs in the array features a gate, source and drain.

When the gate voltage is driven above the threshold voltage, the MOSFET will then turn on and begin conducting between the source and drain. The intensity of the current is determined by the gate-source voltage, with higher values resulting in greater conduction.

When the gate voltage is driven below the threshold voltage, the MOSFET will then turn off, preventing current flow through the device and paralyzing the current between source and drain.

The drain-source on-state resistance is also very low, allowing for greater efficiency during operation. The maximum drain-source blocking voltage of 40V ensures that the MOSFETs can be used in applications requiring high voltages.

The SIRB40DP-T1-GE3 is also rated for a power dissipation of 0.7W, making it an ideal choice for applications requiring low power and high efficiency. The device features an integrated reverse drain-source leakage current protection, which helps protect against voltage spikes and false triggering. This makes it ideal for switch mode and motor controller designs.

Overall, the SIRB40DP-T1-GE3 is an ideal choice for a variety of applications requiring low power loss and fast switching speeds. Its low on-state resistance and high blocking voltage make it suitable for applications such as DC-DC converters, motor controllers and power management.

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