Allicdata Part #: | SIS990DN-T1-GE3TR-ND |
Manufacturer Part#: |
SIS990DN-T1-GE3 |
Price: | $ 0.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 100V 12.1A 1212-8 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 100V 12.1A 25W Sur... |
DataSheet: | SIS990DN-T1-GE3 Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.26980 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 12.1A |
Rds On (Max) @ Id, Vgs: | 85 mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 250pF @ 50V |
Power - Max: | 25W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | PowerPAK® 1212-8 Dual |
Supplier Device Package: | PowerPAK® 1212-8 Dual |
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The SIS990DN-T1-GE3 is a unique component that combines an array of transistors with an N-channel MOSFET. This type of transistor/MOSFET combination has a number of applications, ranging from data communication to power switching.
The SIS990DN-T1-GE3 consists of four transistors and one N-channel MOSFET. The transistors are configured in a way that allows for a number of operating modes. The arrangement of the transistors is such that it allows for the current to be conducted from the input to the output in both directions, and for the voltage to be switched on and off. This type of arrangement is useful in power switching applications as it allows for the power to be switched on and off quickly and used in pulsed current signals.
The N-channel MOSFET in the SIS990DN-T1-GE3 is used to control the current flow between the transistors. This MOSFET can be programmed to operate at different voltages, allowing for a greater degree of control over the output voltage. This feature is useful in data communication applications, where the voltage needs to be precisely adjusted for data transmission.
The SIS990DN-T1-GE3 is capable of providing both digital and analog output signals. This can be useful in a wide range of applications, from small scale analog components to larger industrial power switching applications. The low quiescent current of the SIS990DN-T1-GE3 allows it to be used in low power applications, as well as providing a low noise output. This is beneficial in applications where low levels of noise are critical.
The SIS990DN-T1-GE3 is a very robust component, and can operate at temperatures ranging from -40°C up to +85°C. This makes it well suited for applications where a high degree of reliability is required. The device is also very small and light, allowing for it to be easily integrated into a variety of systems.
In summary, the SIS990DN-T1-GE3 is a unique component that combines an array of transistors with an N-channel MOSFET, making it well suited for numerous applications ranging from data communication to power switching. Its ability to provide both digital and analog output signals, as well as its robust operating temperatures, makes it an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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