Allicdata Part #: | SJPE-H4V-ND |
Manufacturer Part#: |
SJPE-H4V |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Sanken |
Short Description: | DIODE SCHOTTKY 40V 2A SJP |
More Detail: | Diode Schottky 40V 2A Surface Mount SJP |
DataSheet: | SJPE-H4V Datasheet/PDF |
Quantity: | 1000 |
7200 +: | $ 0.13428 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 40V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 600mV @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 50µA @ 40V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | 2-SMD, J-Lead |
Supplier Device Package: | SJP |
Operating Temperature - Junction: | -40°C ~ 150°C |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
A Single Junction Passivated Emitter and H4V (SJPE-H4V) is a single diode rectifier designed for high temperature, high current applications. It is a very efficient and reliable device, capable of operating at temperatures of up to 175℃ with a forward current rating of up to 30A.
The SJPE-H4V rectifier is designed for use in applications such as high power switching and converters, voltage regulators, telecommunications, and automotive electronic systems. It has a low reverse leakage current and low forward voltage drop, making it an ideal choice for applications requiring high efficiency and reliability.
The SJPE-H4V rectifier is comprised of a silicon junction passivated emitter and a high voltage, high temperature, high power 4V rectifier. The emitter is composed of a silicon epitaxial layer, a polysilicon gate, and an oxide layer. The polysilicon gate provides isolation between the emitter and the rectifier, while the oxide layer serves as a buffer between the gate and the rectifier, providing better switching performance.
The rectifier is designed with a dual layer gate construction, which provides better switching performance, higher efficiency and superior long-term reliability. The polysilicon gate is surrounded by an oxide layer which serves as an electrical insulation layer to reduce leakage current, while the high voltage, high temperature, high power rectifier provides a very efficient and reliable switching.
The SJPE-H4V rectifier also features a very efficient and reliable reverse recovery characteristic. This is achieved by the combination of a low capacitance junction, a high temperature rectifier, and a passivated emitter. The reverse recovery time is much faster than in standard rectifiers, and the reverse current is significantly lower, resulting in improved power efficiency and switching stability.
When the SJPE-H4V rectifier is used, the forward voltage is kept to a minimum and the power dissipation is greatly reduced. The device also provides a much lower forward voltage drop than other types of rectifiers, resulting in higher efficiency and better voltage regulation. In addition, the environmental emissions associated with the device are minimal due to its low thermal resistance.
Overall, the SJPE-H4V is an extremely efficient and reliable rectifier. It is designed for use in high temperature, high current applications and provides excellent switching characteristics, a low reverse leakage current, and a low forward voltage drop. The device is especially suitable for use in applications such as high power switching, converters, telecommunications, and automotive electronic systems.
The specific data is subject to PDF, and the above content is for reference
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