SK35-7 Discrete Semiconductor Products |
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Allicdata Part #: | SK35DITR-ND |
Manufacturer Part#: |
SK35-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE SCHOTTKY 50V 3A SMC |
More Detail: | Diode Schottky 50V 3A Surface Mount SMC |
DataSheet: | SK35-7 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 750mV @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 500µA @ 50V |
Capacitance @ Vr, F: | 300pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | SMC |
Operating Temperature - Junction: | -65°C ~ 150°C |
Base Part Number: | SK35 |
Description
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SK35-7 is a rectifier diode which has an average forward current of 1A and a peak forward current of 3.5A. It is designed for use in applications such as power controllers, rectifiers, and other power related circuits. The device has a reverse voltage capability of up to 35V and can also be used in a variety of other applications where a low-power, medium-current load-gated rectifier diode is necessary.The SK35-7 diode is constructed from a substrate of two material layers, which are separated by a layer of semiconductor material. The substrate serves as a support for the components which make up the diode, including the anode and cathode contacts. The semiconductor material itself is made up of a layer of n-doped silicon and a layer of p-doped silicon. This combination of materials creates a rectifying channel which behaves like a one-way valve.At the anode side of the diode, electrical current is allowed to flow in one direction but not in the other. This is because the n-doped silicon acts as a barrier to current flow and the p-doped silicon creates a conducting path. When a voltage is applied to the anode, the diode is said to be "forward biased" and current flows. In contrast, when the voltage is applied to the cathode, the diode is "reverse-biased" and current does not flow.The SK35-7 diode is commonly used in a variety of power related applications including power controllers, rectifiers, and similar power related circuits. In these applications, the diode provides a controlled amount of current which is needed to keep the application running. The diode can also be used in low-power, medium-current load-gated rectifier applications. In these applications, the diode acts as a "switch" which opens and closes in order to control the flow of current. When the voltage is applied to the anode side of the diode, the diode is said to be forward biased and current flows. Conversely, when the voltage is applied to the cathode side of the diode, the diode is said to be reverse-biased and current does not flow. The SK35-7 diode is also used in many other power related applications such as solid-state relays and other power switching circuits. In these applications, the diode switches between an open and closed state in order to control the flow of current in a certain direction. In summary, the SK35-7 is a low-power, medium-current load-gated rectifier diode which can be used in a variety of power related circuits and applications. It has a reverse voltage rating of 35V and a peak forward current rating of 3.5A. The diode is constructed from two material layers separated by a layer of semiconductor material, which create a rectifying channel. At the anode side of this diode, electrical current is only allowed to flow in one direction, creating a one-way valve which can be used to control the flow of current in many different power related applications.
The specific data is subject to PDF, and the above content is for reference
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