Allicdata Part #: | SK84CM6G-ND |
Manufacturer Part#: |
SK84C M6G |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE SCHOTTKY 40V 8A DO214AB |
More Detail: | Diode Schottky 40V 8A Surface Mount DO-214AB (SMC) |
DataSheet: | SK84C M6G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.18225 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 40V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 550mV @ 8A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 500µA @ 40V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 125°C |
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The SK84C M6G is a single rectifier diode that is used in many applications. The device uses a high-efficiency Schottky technology to provide high-speed switching and low on-state voltage. It is designed for use in a wide range of applications, including power conditioning and rectification, switching power supply, low-voltage DC-DC converters, and motor drives. The device can be used as either an ultra-fast switching or a low-voltage rectifier, depending on the application.
The SK84C M6G has a total package size of 5.0 x 1.8 x 1.2 mm, which makes it well suited for high-speed switching applications. The device is made from a NbO2 epitaxial layer which has a gate-oxide thickness of 5.5 nm. Its forward voltage drop is rated at 800 mV, and it has a maximum reverse recovery time of 65 ns. Its breakdown voltage is rated at 800V, and it has a high surge current of 10A.
The working principle of the SK84C M6G involves the Schottky effect, which refers to the rectifying behavior of metal-semiconductor junctions. This behavior is caused by the injection of minority carriers from the metal into the semiconductor material. This process is also referred to as thermionic emission, and it is important to note that it is different from the normal-diode mechanism. With the SK84C M6G, electrons are thermionically emitted from the metal into the semiconductor faster than their respective holes, creating a chemical potential barrier on the metal side that doesn’t allow any electrons to flow in the reverse direction. This results in a rectifying behavior, allowing the device to block any current flow in the opposite direction.
The SK84C M6G is a popular choice for many applications, including DC/DC converters, switch-mode power supplies, and AC/DC rectifiers. It is also well suited for use in motor drives and power conditioning systems. The device has extremely fast switching speed and an extremely low forward voltage drop, making it an ideal choice for many high-speed applications. It also has a high surge current and a high breakdown voltage, making it suitable for a wide range of applications. The device also has a wide temperature range, making it well suited for use in extreme temperatures.
Overall, the SK84C M6G is an excellent choice for many applications, thanks to its high-efficiency Schottky technology. It is well suited for use in a wide range of applications, including power conditioning, DC/DC converters, motor drives, and AC/DC rectifiers. The device has a low forward voltage drop, high surge current, and a wide temperature range, making it a great choice for many high-speed applications. The device has a high breakdown voltage and is capable of blocking any current flow in the opposite direction.
The specific data is subject to PDF, and the above content is for reference
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