SLD11U-017-B

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TVS diodes are used in a wide range of applications to protect sensitive electrical and electronic components from destructive overvoltage transients, caused by lightning, inductive switching and electrostatic discharge (ESD). Among TVS diodes, SLD11U-017-B is designed to offer industry-leading ultra-low capacitance and ultra-low closure of <20 pico-seconds, along with superior ESD performance and low operating leakage current. The SLD11U-017-B is ideal for protecting data-loss sensitive systems, including USB 3.1 Gen 1/2, HDMI, DisplayPort, and other I/O devices.

SLD11U-017-B Features

The SLD11U-017-B has many features, such as a maximum standoff voltage of 17V, a low capacitance of 0.3pF typ. from 1.8V to 3.3V, and an ultra-low closure time of <20 pico-seconds for 5.0V operation. Thanks to the combination of low capacitance and closure time, the SLD11U-017-B provides superior capacitive loading compared to many legacy devices. The device also boasts an IEC 61000-4-2 (ESD) rating of ±20kV HBM, and an IEC 61000-4-5 (surge) rating of 3kA (8/20 μs). It also provides excellent over-voltage protection (OVP) for both ESD cores (typically <1.8V) and USB ports (typically <3.3V).

Application Field and Working Principle of SLD11U-017-B

The superior electrical performance of SLD11U-017-B is ideal for a wide range of applications, particularly in industries and markets requiring the greatest levels of protection and fast time-to-sync. This includes among others automotive, telecommunications, information technology, medical, and consumer electronics. Examples of applications where the SLD11U-017-B can be used include USB ports, HDMI ports, DisplayPort connectors, and other data-loss sensitive systems requiring protection from transient overvoltage surges up to 3kA.

SLD11U-017-B is a low capacitance transient voltage suppression (TVS) diode. The device is based on a reverse conducting rectifier structure, which works in avalanche breakdown mode to suppress voltage transients. The structure includes an internal ESD protection component, which reacts to overvoltage transients faster than the main TVS diode. Consequently, this provides superior ESD protection while minimizing power losses due to fast response.

The SLD11U-017-B features an integrated low-capacitance MOSFET structure that reduces capacitance to 0.3pF from 1.8V to 3.3V typ. The low capacitance ensures low insertion loss across the whole protection circuit, as well as improved signal integrity for data-loss sensitive systems.

The device provides excellent protection against overvoltage transients, and is characterized for a wide range of currents, from 5mA to 1.5A. It is capable of suppressing transients up to 17V, and exhibits ultra-low closure time of <20 pico-seconds up to 5.0V operation. The SLD11U-017-B also provides ESD protection to IEC 61000-4-2 (±20kV HBM) as well as surge protection to IEC 61000-4-5 (3kA, 8/20μs).

The SLD11U-017-B offers a superior frequency performance, with an ultrasonic insertion loss of 80dB and low power dissipation across the whole protection circuit even at high frequencies. It also has an operating current of under 1μA (at 17V) that is virtually undetectable in the power systems, offering excellent switching noise immunity.

Thanks to its features, the SLD11U-017-B is suitable for a variety of applications, such as automotive, telecommunications, information technology, medical, consumer electronics, and other industries that require the greatest levels of protection.

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