| Allicdata Part #: | SM6K2T110TR-ND |
| Manufacturer Part#: |
SM6K2T110 |
| Price: | $ 0.11 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | MOSFET 2N-CH 60V 0.2A SOT-457 |
| More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 200mA 300mW Su... |
| DataSheet: | SM6K2T110 Datasheet/PDF |
| Quantity: | 3000 |
| 3000 +: | $ 0.09803 |
| Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
| Base Part Number: | *K2 |
| Supplier Device Package: | SMT6 |
| Package / Case: | SC-74, SOT-457 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power - Max: | 300mW |
| Input Capacitance (Ciss) (Max) @ Vds: | 15pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 4.4nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 2.4 Ohm @ 200mA, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 200mA |
| Drain to Source Voltage (Vdss): | 60V |
| FET Feature: | Logic Level Gate |
| FET Type: | 2 N-Channel (Dual) |
| Part Status: | Not For New Designs |
| Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SM6K2T110 is a special type of transistor array incorporating a field-effect transistor (FET) and a metal-oxide-semiconductor field-effect transistor (MOSFET). It was first introduced by the RDA Corporation in the early 1980s, and since then it has become one of the most widely used transistor arrays for a variety of circuits. Essentially, the SM6K2T110 is designed for use in applications in which multiple transistors can be used to control a single input as in a computer memory or logic circuit. This type of array is also well-suited for use in analog applications, such as in analog-to-digital converters.
The SM6K2T110 consists of two parts; a drain and a source. It can be described as a combination of two transistors that share the same source, but have different drains. In operation, the source allows the drain of one device to control the flow of current to the source of the other. This type of control allows for highly efficient control of multiple transistors in a single circuit, as the drain can be used to regulate the current flow to the source.
The working principle of the SM6K2T110 is quite simple. When a voltage is applied to the gate, a current is generated between the drain and the source. This current is then regulated by the gate voltage, as the gate voltage changes the resistance between the drain and the source, thereby controlling the current flow. This type of array offers excellent performance characteristics, as it allows for highly efficient management of multiple transistors in a single circuit.
The SM6K2T110 is an ideal choice for designers looking to create circuits that require multiple transistors to manage a single input, such as in a computer memory or logic circuit. It can also be used in analog applications such as in analog-to-digital converters. With its ability to offer highly efficient control, the SM6K2T110 has become a widely accepted choice for a variety of applications, especially those requiring multiple transistors to control a single input.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| SM6K2T110 | ROHM Semicon... | 0.11 $ | 3000 | MOSFET 2N-CH 60V 0.2A SOT... |
MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...
MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...
MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...
MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...
MOSFET 2N-CH 56LFPAKMosfet Array
MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...
SM6K2T110 Datasheet/PDF