Allicdata Part #: | SMAJ45AR3G-ND |
Manufacturer Part#: |
SMAJ45A R3G |
Price: | $ 0.05 |
Product Category: | Circuit Protection |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | TVS DIODE 45V 72.7V DO214AC |
More Detail: | N/A |
DataSheet: | SMAJ45A R3G Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
63000 +: | $ 0.04551 |
Voltage - Clamping (Max) @ Ipp: | 72.7V |
Supplier Device Package: | DO-214AC (SMA) |
Package / Case: | DO-214AC, SMA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 400W |
Current - Peak Pulse (10/1000µs): | 5.5A |
Series: | SMAJ |
Voltage - Breakdown (Min): | 50V |
Voltage - Reverse Standoff (Typ): | 45V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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TVS-Diodes: SMJ45A R3G Application Field and Working Principle
TVS diodes, or transient voltage suppressors (TVSs), are components designed to protect sensitive electronics against sudden, high-voltage transients. They feature clamping action that shuts down supply lines, clamping voltage, and ESD protection. TVSs are available in a variety of forms, including uni-directional devices that are optimized for high-frequency transients and bi-directional types that provide symmetrical protection from over-voltage reverse currents. Among them, SMJ45A R3G is a type commonly used in modern electronics.
The SMJ45A R3G from Diodes Incorporated is a unidirectional TVS diode with an operating junction temperature of +150°C. It offers a clamping voltage of 45V (Typ. @ Ipp = 5.0A) and offers excellent surge handling capability—with peak pulse power capability of 450W at 10/1000 μs (tP = 10μs). This device has a peak pulse current of 8.0A (max). It is designed for use at the input/output ports of high-speed data interface, communication/network IC, memory modules, etc.
The working principle of the SMJ45A R3G TVS diode is based on its ability to change its current-carrying capacity with changing voltage. The device consists of two regions—a saturation region and a breakdown region. In the saturation region, increasing the voltage gradually increases the amount of current that can travel through the device. On the other hand, in the breakdown region, the current suddenly increases when the voltage reaches a certain threshold—called the breakdown voltage. This sudden increase in current is then “clamped” by the device, limiting the voltage on the terminal.
The SMJ45A R3G TVS diode has a variety of benefits beyond effective surge protection. This device supports excellent electrical characteristics such as low leakage current, low capacitance, low dynamic resistance, and fast response times. Furthermore, as the device does not rely on current-limiting resistors and capacitors, it will offer superior EMC performance by avoiding generated EMC emission from a resistor-capacitor network.
In summary, the SMAJ45A R3G TVS diode is a robust and reliable protection component designed to protect electronic devices from excessive voltage and current surges. It features fast response times, excellent electrical characteristics, and superior EMC performance, making it an ideal choice for industrial, automotive, and consumer applications.
The specific data is subject to PDF, and the above content is for reference
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