Allicdata Part #: | SMAJ5919BTPMSTR-ND |
Manufacturer Part#: |
SMAJ5919B-TP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | DIODE ZENER 5.6V 1.5W DO214AC |
More Detail: | Zener Diode 5.6V 1.5W ±5% Surface Mount DO-214AC (... |
DataSheet: | SMAJ5919B-TP Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 5.6V |
Tolerance: | ±5% |
Power - Max: | 1.5W |
Impedance (Max) (Zzt): | 2 Ohms |
Current - Reverse Leakage @ Vr: | 2.5µA @ 3V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 200mA |
Operating Temperature: | 150°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMAJ) |
Base Part Number: | SMAJ5919 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SMAJ5919B-TP is a single Zener diode offering excellent protection in key areas of circuit performance. As such, it is widely used in low voltage circuit applications that require protective components against hazardous overvoltage or large voltage fluctuations. This type of diode is a good solution when single or reversed polarity transient protection is required. In addition, it has a low dynamic impedance that allows it to handle large power surges without destabilizing the circuit.
The SMAJ5919B-TP is a unidirectional silicon Zener diode specially designed for breakdown voltage protection applications. It is commonly used in automotive, portable electronic, low voltage protection, and industrial circuits. Its robust design and high current ratings make it suitable for a variety of protection applications that require reliable operation from low to high junction temperatures.
The diode works by using the breakdown voltage of the Si NPN junction to cut off any voltages above the Zener voltage. The Zener voltage is set by the user and can be adjusted. The SMAJ5919B-TP has a high peak power and current capability that allows it to withstand routine voltage surges. It also has a low dynamic impedance which further enhances the protection performance. Finally, the diode is constructed with a special heat sink design that allows it to smoothly conduct heat away from the diode.
The primary application of the SMAJ5919B-TP is in reverse transient protection circuits. It is also suitable for use in voltage regulation circuits. The diode offers excellent reverse voltage protection due to its Si NPN junction and can be used to protect sensitive circuits against high frequency transients and surges. The diode\'s low dynamic impedance also helps reduce power consumption when the diode is operated at reduced operating voltages. Further, the diode offers high temperature operations and can operate at an ambient temperature of 85°C.
In addition, the SMAJ5919B-TP is a low noise and low capacitance device that offers excellent noise immunity and fast switching. It is also suitable for use in high frequency oscillator applications as it has much lower distraction from supply deviation than other components. Finally, the diode has high peak current capability which makes it capable of handling voltage surges up to 5A in peak currents.
Overall, the SMAJ5919B-TP is an excellent choice for reverse transient protection and voltage regulation applications due to its robust construction and high current ratings. Its ability to withstand repeated voltages and temperature extremes makes it suitable for a variety of circuit protection tasks. In addition, its low noise and low capacitance characteristics make it an ideal component for high frequency applications.
The specific data is subject to PDF, and the above content is for reference
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