SMB10J24HE3/52

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A Transient Voltage Suppressor Diode (TVS) is a type of diode that is designed to handle transient electric current. They are used in every application where transient currents can be expected due to their ability to conduct overvoltage spikes quickly. This makes them ideal for stable operation of the circuits that utilize them. The SMB10J24HE3/52 is an example of such a diode. It is a low-power, low-capacitance transient voltage suppressor made from silicon epitaxial planar diode.

Application Field

Due to its low power operation, the SMB10J24HE3/52 diode is commonly used in low power circuit designs, such as those found in USB and serial data interface applications. It can be used in both consumer electronic and home appliance applications, where a low-level protection from voltage spikes is required. For those applications that call for more robust protection, the diode can also be configured to protect against higher power voltage spikes.

The diode is especially advantageous in applications with a high amount of interference, such as electronics found in medical and military applications, where transient overvoltages need to be protected. The SMB10J24HE3/52 has also been used in digital communications, where it effectively minimizes ESD threats and absorbs surges quickly during transients.

Working Principle

The SMB10J24HE3/52 diode works on the principle of breakdown voltage, or avalanche breakdown. When a current passes through the diode, it creates an electric field which, if gets big enough, results in the sudden breakdown of the device. When a voltage which is higher than the breakdown voltage is applied to the diode, it will immediately become conductive.

The diode then quickly conducts the overvoltage, preventing it from damaging the connected components. When the electric field has been reduced and is no longer above the breakdown voltage, the diode returns to its non-conductive state. The diode has a typical turn-on voltage of 18 V and a breakdown voltage of 24 V. Furthermore, the diode can handle currents of up to 8A and can dissipate power of up to 250 mW.

In conclusion, the SMB10J24HE3/52 is a low-power, low-capacitance transient voltage suppressor made from silicon epitaxial planar diode, ideal for usage in low power designs found in USB and serial data interface applications, as well as many other applications where transient overvoltages need to be protected. Its working principle is based on the breakdown voltage, and it can dissipate power of up to 250 mW.

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