SMBG48CHE3/52 Allicdata Electronics
Allicdata Part #:

SMBG48CHE3/52-ND

Manufacturer Part#:

SMBG48CHE3/52

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 48V 85.5V DO215AA
More Detail: N/A
DataSheet: SMBG48CHE3/52 datasheetSMBG48CHE3/52 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - Peak Pulse (10/1000µs): 7A
Base Part Number: SMBG
Supplier Device Package: DO-215AA (SMBG)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Series: Automotive, AEC-Q101, TransZorb®
Voltage - Clamping (Max) @ Ipp: 85.5V
Voltage - Breakdown (Min): 53.3V
Voltage - Reverse Standoff (Typ): 48V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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Today, a widely used component in the discrete device family are TVS (transient voltage suppression) diodes, particularly in the protection of circuits in devices and circuits from destructive transients and surge events (ESD, EFT, etc.). The device of choice, in a circuit protection application, is the SMBG48CHE3/52.

Application field of SMBG48CHE3/52

The SMBG48CHE3/52 is a uni-directional Transient Voltage Suppressor Diode (TVS) which is ideal for high rating voltage protection for Data Line, such as USB3.1, HDMI2.0, DP / LVDs. With its 3V ~ 5.2V of breakdown voltage and 4A of peak pulse power dissipation, this device can provide a successful protection performance, making it an ideal device to safeguard sensitive electronic equipment from voltage and current transients induced by a variety of sources such as lightning, electrostatic discharge, and inductive load switching.

Working principle of SMBG48CHE3/52

SMBG48CHE3/52 employing the state-of-the-art, planar process technology, provides a ruggedized block of redundancy allowing it to absorb tremendous transient overvoltage (in excess of 50kV/ms) before reaching the breakdown voltage. The anode and cathode parts of the silicon junction of the SMBG48CHE3/52 are connected to two capacitor layers separated by a thin dielectric layer to form a capacitor-resistor-diode (CRD) combination. This device acts as a precision zener diode, clamping voltage and current to a safe level, and resist excessive transient voltage.

During normal operating conditions, the SMBG48CHE3/52 operates as an open circuit. However, during an overvoltage event (induced by ESD, EFT, CSPS, etc.), the diode begins to conduct current to reduce the event-level voltage to a predefined level, resulting in a lower voltage, which is known as the ‘clamping voltage’.

The advantage of the SMBG48CHE3/52 is that it has a low capacitance value compared to other TVS diodes, making it well suited for high speed digital applications where minimal capacitive loading is desired.

Conclusion

SMBG48CHE3/52 offers excellent transient overvoltage protection for electronic circuits and equipment, due to its robust construction, ultra low capacitance and reliable performance. It is ideal for protecting sensitive equipment from sites exposed to lighting, electrostatic discharge and other transient voltages.

The specific data is subject to PDF, and the above content is for reference

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