| Allicdata Part #: | SMBJ110A-FDITR-ND |
| Manufacturer Part#: |
SMBJ110A-13-F |
| Price: | $ 0.07 |
| Product Category: | Circuit Protection |
| Manufacturer: | Diodes Incorporated |
| Short Description: | TVS DIODE 110V 177V SMB |
| More Detail: | N/A |
| DataSheet: | SMBJ110A-13-F Datasheet/PDF |
| Quantity: | 6000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS Compliant |
| 3000 +: | $ 0.06237 |
| 6000 +: | $ 0.05891 |
| 15000 +: | $ 0.05371 |
| 30000 +: | $ 0.05024 |
| Current - Peak Pulse (10/1000µs): | 3.4A |
| Base Part Number: | SMBJ110 |
| Supplier Device Package: | SMB |
| Package / Case: | DO-214AA, SMB |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 600W |
| Series: | SMBJ |
| Voltage - Clamping (Max) @ Ipp: | 177V |
| Voltage - Breakdown (Min): | 122V |
| Voltage - Reverse Standoff (Typ): | 110V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tape & Reel (TR) |
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The SMBJ110A-13-F is an unidirectional transient voltage suppressor (TVS) diode. It is commonly used for the protection of high frequency lines from electrostatic discharge (ESD) and other power faults. The device features an integrated p-channel MOSFET that works as a crowbar circuit, which is triggered by a voltage spike that exceeds the maximum working voltage of the device.
The SMBJ110A-13-F is commonly used to protect circuits from overvoltage conditions caused by ESD, transient pulses, and other sources. It is also widely used in automotive, telecom, and industrial applications where, due to their size and weight, they need to be able to withstand shocks and vibration. This device can be used as a load switch, or it can be used in a fail-safe configuration, such as when protecting a circuit from an overvoltage condition.
The SMBJ110A-13-F can handle up to 130 W peak pulse power and 13 V breakdown voltage. It has a low thermal resistance of 10 W/K °C, which makes it suitable for applications where lower thermal dissipation is desired. The device is also rated for an operating temperature range of -55 °C to 125 °C.
The working principle of the SMBJ110A-13-F is based on the principle of avalanche breakdown. When a voltage higher than the breakdown voltage is applied across the device, the electrons in the junction region start to accelerate, generating more electrons through the process of impact ionization. This creates a self-sustaining current, known as an avalanche current, which allows a large current to flow quickly through the junction.
The current is then dissipated by the device, which protects the circuit from the overvoltage condition. The device also has a p-channel MOSFET switch that is activated when the voltage exceeds the breakdown voltage, effectively providing a switch-off action that prevents further damage.
The SMBJ110A-13-F is an ideal choice for the protection of high voltage lines from transient overvoltage conditions, offering both protection and reliability. Because of its small size and weight, it can be used in a variety of applications, including automotive, telecom, and industrial.
The specific data is subject to PDF, and the above content is for reference
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| SMBJ18A-TP | Micro Commer... | 0.07 $ | 1000 | TVS DIODE 18V 29.2V DO214... |
| SMBJ28CA-TR | STMicroelect... | -- | 1000 | TVS DIODE 28V 59V SMB |
| SMBJ12A-E3/5B | Vishay Semic... | -- | 1000 | TVS DIODE 12V 19.9V DO214... |
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| SMBJ48CA M4G | Taiwan Semic... | 0.07 $ | 1000 | TVS DIODE 48V 77.4V DO214... |
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| SMBJ10CE3/TR13 | Microsemi Co... | 0.16 $ | 1000 | TVS DIODE 10V 18.8V DO214... |
| SMBJ45CE3/TR13 | Microsemi Co... | 0.16 $ | 1000 | TVS DIODE 45V 80.3V DO214... |
| SMBJ200E3/TR13 | Microsemi Co... | 0.26 $ | 1000 | TVS DIODE 200V DO214AA |
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SMBJ110A-13-F Datasheet/PDF