SMBJ18E3/TR13 Allicdata Electronics
Allicdata Part #:

SMBJ18E3/TR13-ND

Manufacturer Part#:

SMBJ18E3/TR13

Price: $ 0.16
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 18V 32.2V DO214AA
More Detail: N/A
DataSheet: SMBJ18E3/TR13 datasheetSMBJ18E3/TR13 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.14388
Stock 1000Can Ship Immediately
$ 0.16
Specifications
Current - Peak Pulse (10/1000µs): 18.6A
Base Part Number: SMBJ18
Supplier Device Package: SMBJ (DO-214AA)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Series: --
Voltage - Clamping (Max) @ Ipp: 32.2V
Voltage - Breakdown (Min): 20V
Voltage - Reverse Standoff (Typ): 18V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS diodes are an invaluable component in electronic circuits that must be protected against overvoltage transients. The SMBJ18E3/TR13 is a popular transient voltage suppressor (TVS) available from Diodes Inc., a leader in the development and manufacturing of electronic consumer products. The SMBJ18E3/TR13 is designed to protect sensitive electronic equipment from exposure to ESD events (electrostatic discharge).

This diode possesses an automotive-grade, low-capacity body capable of withstanding voltages of up to 18 V. It also has an exceedingly fast response time of less than 1 ns (nanosecond) which enables it to quickly clamp transients. In addition, the diode’s unidirectional construction makes it suitable for use in bi-directional protection applications. The SMBJ series of diodes also offers a wide range of reverse voltage capabilities ranging from 5.0 V to 200 V. The diode’s SOD-323 form factor allows for a more compact design, suitable for use in automotive and mobile device applications.

The working principle of the SMBJ18E3/TR13 is simple. It has a reverse blocking capability, but in the presence of an overvoltage, current can flow. This is done by utilizing a Zener breakdown mechanism, whereby when the breakdown voltage is reached, electrons in the junction efficiently accelerate and decelerate the electric current over the Zener region, leading to a flow of current. The structure of the SMBJ18E3/TR13 also includes a parasitic diode which, when a reversal voltage beyond the breakdown voltage is applied, triggers a conductionchannel between the anode and cathode ends. The combination of these two components forms an avalanche breakdown mechanism, which allows for current to be passed while protecting from damage due to excessive voltage.

The SMBJ18E3/TR13 has a variety of potential applications. Due to its ESD protection capabilities, the diode isa popular choice for use in high-speed data transmission lines. For instance, in cellular or 4G/LTE networks, the SMBJ18E3/TR13 effectively protects sensitive RF receivers from ESD-induced transients. Furthermore, the diode can be used to protect automotive systems such as powertrain, body-electronics, telecommunications, and infotainment systems, from electromagnetic overvoltages.

In conclusion, the SMBJ18E3/TR13 is an invaluable transient voltage suppressor designed for use in a variety of electronic applications. The low-capacity form factor, rapid response time, and ESD protection make the diode an ideal candidate for use in automotive and mobile device applications. The combination of the Zener breakdown and avalanche breakdown mechanisms create a highly efficient current flow which protects sensitive electronic components from damage due to overvoltage transients.

The specific data is subject to PDF, and the above content is for reference

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