SMBJ130A-E3/5B Allicdata Electronics
Allicdata Part #:

SMBJ130A-E3/5B-ND

Manufacturer Part#:

SMBJ130A-E3/5B

Price: $ 0.08
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 130V 209V DO214AA
More Detail: N/A
DataSheet: SMBJ130A-E3/5B datasheetSMBJ130A-E3/5B Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3200 +: $ 0.06942
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Current - Peak Pulse (10/1000µs): 2.9A
Base Part Number: SMBJ
Supplier Device Package: DO-214AA (SMBJ)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Series: TransZorb®
Voltage - Clamping (Max) @ Ipp: 209V
Voltage - Breakdown (Min): 144V
Voltage - Reverse Standoff (Typ): 130V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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Transient Voltage Suppression (TVS) diodes are a special type of diode designed to swiftly counteract the electromotive force (EMF) generated by a surge or electrostatic discharge (ESD). The SMBJ130A-E3/5B TVS diode is one such example. It is a unidirectional bi-directional diode that is used in the protection of high-speed telecommunications, computers, electronic components and equipment against surges and ESD.

The diode consists of a PN junction, an anode and a cathode, and exhibits a breakdown voltage of 130V. It is a breakdown voltage-triggered diode, which operates by preventing the current from exceeding a certain value as this voltage is reached. The anode and cathode are located in the same encapsulation, with the anode itself having an internal connection to the current carrying device. In order to provide the required protection, the SMBJ130A-E3/5B includes an overvoltage protection circuit.

The SMBJ130A-E3/5B offers excellent bidirectional protection, and is able to respond to surges as short as 5 nanoseconds (ns). It also provides fast recovery from voltage transients. The diode is designed to be highly reliable, with an average failure rate (AFR) of 0.1%. Its junction capacitance is low for low inductance applications, and its operating voltage range is 5.0 V to 150 V.

The SMBJ130A-E3/5B diode is typically used in telecommunications and information technology equipment, including Ethernet, ISDN, Fibre Channel, and Gigabit Ethernet. It can be used in automotive electronics, medical equipment, consumer electronics, and other electronic equipment where surge and ESD protection is necessary.

The working principle of the SMBJ130A-E3/5B is based on the PN junction diode, which acts as a rectifier. When a voltage is applied in the forward direction, the diode\'s PN junction will conduct current, forming a direct current (DC). When the applied voltage exceeds the breakdown voltage of the diode, it will trigger a reverse or "avalanche" current. This avalanche current is what provides the surge neutrality that is needed to effectively protect against electrical surges and ESD.

The SMBJ130A-E3/5B is a unidirectional TVS device, meaning that it can only provide protection against surges applied in the forward direction. This means that it must be used with other components, such as bidirectional car audio protectors, and capacitive voltage protectors, to form a complete circuit and provide surge protection.

Overall, the SMBJ130A-E3/5B TVS diode is an effective and reliable surge and ESD protection device, specially designed for high-speed telecommunications and information technology applications. It is capable of responding quickly to transient voltage surges, and its low junction capacitance provides low inductance protection.

The specific data is subject to PDF, and the above content is for reference

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