SMBJ13A-QH Allicdata Electronics
Allicdata Part #:

SMBJ13A-QH-ND

Manufacturer Part#:

SMBJ13A-QH

Price: $ 0.15
Product Category:

Circuit Protection

Manufacturer: Bourns Inc.
Short Description: TVS DIODE 13V 21.5V SMB
More Detail: N/A
DataSheet: SMBJ13A-QH datasheetSMBJ13A-QH Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
2000 +: $ 0.13124
Stock 1000Can Ship Immediately
$ 0.15
Specifications
Current - Peak Pulse (10/1000µs): 28A
Supplier Device Package: SMB (DO-214AA)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Series: Automotive, AEC-Q101, SMBJ
Voltage - Clamping (Max) @ Ipp: 21.5V
Voltage - Breakdown (Min): 14.4V
Voltage - Reverse Standoff (Typ): 13V
Unidirectional Channels: 1
Type: Zener
Lead Free Status / RoHS Status: --
Part Status: Active
Description

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The SMBJ13A-QH is a diode specifically designed for ESD (electrostatic discharge) protection and is part of a larger group of diodes known as TVS (Transient Voltage Suppressors). TVS diodes protect semiconductor components from voltage events that exceed the normal operational limits of those components. Such a protection is necessary as a safeguard for other sensitive components as without it, the cost of repairs and replacements can be significantly high. The SMBJ13A-QH is a highly reliable diode and boasts excellent clamping capabilities, making it perfect for use in a number of different circuit protection applications.

The SMBJ13A-QH has a peak pulse power of 600W, a peak pulse current of 28.8A, a forward voltage maximum of 3V, and a forward current maximum of 5A. The maximum operating voltage of the device is 13V, with a breakover voltage of 10V. It also contains an internal avalanche energy rating of 62mJ, which is used to calculate the safe operating area of the device. All these characteristics combine to make the SMBJ13A-QH a great device for use in applications which require protection against ESD events.

The working principle of the SMBJ13A-QH is simple and relies on the breakdown of the PN junction when exposed to a high electrical field. When the electric field is strong enough, electrons are pulled from the P-type material and holes are pushed into the N-type material, which creates a conduction path across the junction. As the current flows through the path, the voltage across the PN junction decreases and the device begins to act like a resistor, effectively clamping the voltage. This process is known as breakdown voltage and it is this that makes the SMBJ13A-QH ideal for protection against ESD events.

The SMBJ13A-QH is optimised for use in high speed or high power applications, such as computers, telecommunications, networking, home appliances, avionics and even medical equipment. It is specifically designed to be a low cost, but highly reliable diode, as its breakdown voltage and cell size are significantly smaller than its competitors, allowing for the device to be used in a more confined space. The SMBJ13A-QH is a great diode for ESD protection and is key role in ensuring the protection of today’s sensitive electronic components.

The specific data is subject to PDF, and the above content is for reference

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