SMBJ75CAHR5G Circuit Protection |
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| Allicdata Part #: | SMBJ75CAHR5G-ND |
| Manufacturer Part#: |
SMBJ75CAHR5G |
| Price: | $ 0.08 |
| Product Category: | Circuit Protection |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | TVS DIODE 75V 121V DO214AA |
| More Detail: | N/A |
| DataSheet: | SMBJ75CAHR5G Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 3400 +: | $ 0.07488 |
| Voltage - Clamping (Max) @ Ipp: | 121V |
| Supplier Device Package: | DO-214AA (SMB) |
| Package / Case: | DO-214AA, SMB |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | Automotive |
| Power Line Protection: | No |
| Power - Peak Pulse: | 600W |
| Current - Peak Pulse (10/1000µs): | 5.2A |
| Series: | Automotive, AEC-Q101, SMBJ |
| Voltage - Breakdown (Min): | 83.3V |
| Voltage - Reverse Standoff (Typ): | 75V |
| Bidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tape & Reel (TR) |
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This article is about the SMBJ75CAHR5G TVS - Diodes. TVS - diodes, also known as transil diodes, are components that protect against transient surge voltages, ensure signal integrity, and protect circuits such as those found in communication and automotive systems from the resulting damage caused by voltage transients. The SMBJ75CAHR5G is specifically designed with the purpose of providing high-reliability electrostatic discharge (ESD) protection to operate over a wide temperature range.
The SMBJ75CAHR5G TVS - Diodes has a wide range of application fields. It is widely used in USB and other peripheral device applications and ideal for secondary protection of integrated circuits (ICs). It is commonly used for protection against voltage transient such as electrostatic discharge (ESD), lightning, and inductive switching in consumer, automotive, and industrial applications. Additionally, the device is suitable for protecting high-speed data lines such as USB, PCI Express, HDMI, V-by-one, Ethernet, and multipoint data transmission systems and in power supply circuits against electrostatic discharge (ESD), surge, and overload.
The working principle of the SMBJ75CAHR5G is based on the avalanche breakdown effect. When the forward voltage applied to the device reaches a certain level, the avalanche breakdown effect occurs, resulting in a large current of hundreds of mA flowing into the anode and minimizing the potential difference between the anode and cathode. This allows the device to provide an increased degree of protection, clamping quickly and effectively from the moment a voltage transient occurs. Furthermore, the device is designed to have a temperature coefficient of -3.8 to -3.5%/°C, making it ideal for automotive applications requiring a wide temperature range performance.
The SMBJ75CAHR5G is specifically designed as a low capacitance bidirectional TVS diode that provides ESD protection for USB and other peripheral applications. It is designed with a working peak reverse voltage of 75 volts and a working peak pulse power of 800 watts. Its clamping voltage is between 10 V and 17 V, making it ideal for use in applications requiring a low clamp voltage. Furthermore, the device has a low leakage current of 3 μA and a fast response time of 1 nanosecond.
In conclusion, the SMBJ75CAHR5G TVS - Diodes is a low capacitance bidirectional TVS diode designed to provide an increased level of protection from transient surge voltages. It is widely used for protection against voltage transient such as electrostatic discharge (ESD), lightning, and inductive switching in consumer, automotive, and industrial applications. The device is designed with a working peak reverse voltage of 75 volts and a working peak pulse power of 800 watts. Furthermore, it has a low leakage current of 3 μA and a fast response time of 1 nanosecond. The device is also designed to have a temperature coefficient of -3.8 to -3.5%/°C, making it ideal for automotive applications requiring a wide temperature range performance.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| SMBJ188CA-E3/52 | Vishay Semic... | -- | 1000 | TVS DIODE 188V 328V DO214... |
| SMBJ22CA-HR | Littelfuse I... | 4.19 $ | 1000 | TVS DIODE 22V 35.5V DO214... |
| SMBJ6.0D-M3/I | Vishay Semic... | 0.07 $ | 1000 | TVS DIODE 6V 10.2V DO214A... |
| SMBJ28CA M4G | Taiwan Semic... | 0.07 $ | 1000 | TVS DIODE 28V 45.4V DO214... |
| SMBJ20A M4G | Taiwan Semic... | 0.07 $ | 1000 | TVS DIODE 20V 32.4V DO214... |
| SMBJ6.5AHM4G | Taiwan Semic... | 0.07 $ | 1000 | TVS DIODE 6.5V 11.2V DO21... |
| SMBJ54AHE3/52 | Vishay Semic... | -- | 1000 | TVS DIODE 54V 87.1V DO214... |
| SMBJ200CA-H | Bourns Inc. | 0.15 $ | 1000 | TVS DIODE 200V 324V SMB |
| SMBJ7.5CA-M3/5B | Vishay Semic... | 0.15 $ | 1000 | TVS DIODE 7.5V 12.9V DO21... |
| SMBJ17E3/TR13 | Microsemi Co... | 0.16 $ | 1000 | TVS DIODE 17V 30.5V DO214... |
| SMBJ12CA-QH | Bourns Inc. | 0.16 $ | 1000 | TVS DIODE 12V 19.9V SMB |
| SMBJ17CAHE3/5B | Vishay Semic... | 0.16 $ | 1000 | TVS DIODE 17V 27.6V DO214... |
| SMBJ28A-13 | Diodes Incor... | 0.27 $ | 1000 | TVS DIODE 28V 45.4V SMB |
| SMBJ85C-E3/52 | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 85V 151V DO214A... |
| SMBJ110-E3/5B | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 110V 196V DO214... |
| SMBJ120HE3/5B | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 120V 214V DO214... |
| SMBJ5928AE3/TR13 | Microsemi Co... | 0.48 $ | 1000 | DIODE ZENER 13V 2W SMBJZe... |
| SMBJ5930BE3/TR13 | Microsemi Co... | 0.48 $ | 1000 | DIODE ZENER 16V 2W SMBJZe... |
| SMBJ5919B/TR13 | Microsemi Co... | 0.83 $ | 1000 | DIODE ZENER 5.6V 2W SMBJZ... |
| SMBJ5383A/TR13 | Microsemi Co... | 0.0 $ | 1000 | DIODE ZENER 150V 5W SMBJZ... |
| SMBJ5337BE3/TR13 | Microsemi Co... | 0.0 $ | 1000 | DIODE ZENER 4.7V 5W SMBJZ... |
| SMBJ18CA-E3/52 | Vishay Semic... | -- | 1000 | TVS DIODE 18V 29.2V DO214... |
| SMBJ7.5A-M3/5B | Vishay Semic... | 0.11 $ | 1000 | TVS DIODE 7.5V 12.9V DO21... |
| SMBJP6KE91A-TP | Micro Commer... | 0.08 $ | 3000 | TVS DIODE 77.8V 125V DO21... |
| SMBJ6.5CA-E3/52 | Vishay Semic... | -- | 1000 | TVS DIODE 6.5V 11.2V DO21... |
| SMBJ78D-M3/H | Vishay Semic... | 0.11 $ | 1000 | TVS DIODE 78V 124V DO214A... |
| SMBJ7.0C | Littelfuse I... | 0.12 $ | 1000 | TVS DIODE 7V 12.6V DO214A... |
| SMBJ8.0CATR | SMC Diode So... | 0.05 $ | 1000 | TVS DIODE 8V 13.6V SMB |
| SMBJ7.5CA M4G | Taiwan Semic... | 0.07 $ | 1000 | TVS DIODE 7.5V 12.9V DO21... |
| SMBJ45A R5G | Taiwan Semic... | 0.08 $ | 1000 | TVS DIODE 45V 72.7V DO214... |
| SMBJ130A-E3/5B | Vishay Semic... | 0.08 $ | 1000 | TVS DIODE 130V 209V DO214... |
| SMBJ75CAHM4G | Taiwan Semic... | 0.08 $ | 1000 | TVS DIODE 75V 121V DO214A... |
| SMBJ75CAHR5G | Taiwan Semic... | 0.08 $ | 1000 | TVS DIODE 75V 121V DO214A... |
| SMBJ48A-M3/52 | Vishay Semic... | 0.11 $ | 1000 | TVS DIODE 48V 77.4V DO214... |
| SMBJ13AHE3/5B | Vishay Semic... | 0.13 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
| SMBJ10CA-M3/52 | Vishay Semic... | 0.15 $ | 1000 | TVS DIODE 10V 17V DO214AA |
| SMBJ28CA-M3/52 | Vishay Semic... | 0.15 $ | 1000 | TVS DIODE 28V 45.4V DO214... |
| SMBJ28E3/TR13 | Microsemi Co... | 0.16 $ | 1000 | TVS DIODE 28V 50V DO214AA |
| SMBJ100CAHE3/5B | Vishay Semic... | 0.16 $ | 1000 | TVS DIODE 100V 162V DO214... |
| SMBJ85CAE3/TR13 | Microsemi Co... | 0.16 $ | 1000 | TVS DIODE 85V 137V DO214A... |
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SMBJ75CAHR5G Datasheet/PDF