SMBJ150CA-E3/52 Allicdata Electronics

SMBJ150CA-E3/52 Circuit Protection

Allicdata Part #:

SMBJ150CA-E3/52GITR-ND

Manufacturer Part#:

SMBJ150CA-E3/52

Price: $ 0.13
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 150V 243V DO214AA
More Detail: N/A
DataSheet: SMBJ150CA-E3/52 datasheetSMBJ150CA-E3/52 Datasheet/PDF
Quantity: 750
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 0.13000
10 +: $ 0.12610
100 +: $ 0.12350
1000 +: $ 0.12090
10000 +: $ 0.11700
Stock 750Can Ship Immediately
$ 0.13
Specifications
Current - Peak Pulse (10/1000µs): 2.5A
Base Part Number: SMBJ
Supplier Device Package: DO-214AA (SMBJ)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Series: TransZorb®
Voltage - Clamping (Max) @ Ipp: 243V
Voltage - Breakdown (Min): 167V
Voltage - Reverse Standoff (Typ): 150V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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SMBJ150CA-E3/52 is a diode based on the technology of Transient Voltage Suppression (TVS). It is widely used in electronic devices to protect against electrostatic discharge (ESD). This type of diode is commonly used in a variety of applications such as overvoltage protection, reverse polarity protection, and ESD protection.

The operating principle behind TVS Diodes is based upon the principle of avalanche breakdown. In a basic diode, the electric field created by the applied voltage is weakened by the impact ionization occurring near the junction of the diode. When the applied voltage exceeds the breakdown voltage of the diode, the impact ionization rate increases and thus the current increases exponentially, releasing a huge amount of energy. This is the primary mechanism behind the protection provided by the SMBJ150CA-E3/52 diode.

The SMBJ150CA-E3/52 is designed for various types of overvoltage protection. It can be used in multiple applications such as power supplies, automotive electronics, and aircraft systems. Its high holding power can provide protection for electrical and electronic components in power and AC/DC circuits. This makes this diode ideal for applications that require fast ESD protection.

The working principle of the SMBJ150CA-E3/52 is based on the concept of avalanche peak current. When the applied voltage exceeds the breakdown voltage, the diode exhibits a phenomenon known as an avalanche breakdown. This is a rapid avalanche electric current which is thousands of times higher than the normal diode current. The current flow in the diode can be controlled by changing the avalanche voltage (V), which can be adjusted using a series resistor. By increasing or decreasing this resistor, the current can be increased or decreased accordingly.

In addition, the SMBJ150CA-E3/52 has built-in ESD protection features. It can withstand overvoltage and reverse polarity conditions to protect sensitive components from ESD damage. The diode can also be used for line suppression, line voltage clamping, and overcurrent protection. The SMBJ150CA-E3/52 also has a high peak power capability, making it ideal for applications where high energy transients are expected to occur.

The SMBJ150CA-E3/52 is an ideal TVS Diode for a range of applications. Its ESD protection, overvoltage protection, and reverse polarity features make it perfect for applications that need fast and efficient protection against voltage transients. The adjustable peak current and high peak power capability make this diode essential for a range of high-end applications.

The SMBJ150CA-E3/52 is a reliable TVS Diode with a wide range of uses. Its avalanche breakdown, ESD protection, and adjustable peak current features make it ideal for a wide range of applications. With its high peak power rating, this diode is suitable for applications with high energy transients.

The specific data is subject to PDF, and the above content is for reference

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