SMBJ5944C/TR13

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SMBJ5944C/TR13 is a single Zener diode, part of a wide variety of electronic components used in a variety of applications, from audio amplifiers to overhead displays. This device features low forward voltage drop and high peak working power. It is constructed with a plastic encapsulated leadless Zener diode and offers maximum junction operating temperature and storage temperature range of -55° to +150°C.

The SMBJ5944C/TR13 is useful in a variety of applications, such as protection of integrated circuits and transistors, that are vulnerable to electrostatic discharge and transient voltage protection of measuring equipment or sensors. Furthermore, it can be used in electronic attenuators, welding equipment, AC and DC mains overvoltage protection, lighting and home appliances, etc.

The working principle of the SMBJ5944C/TR13 is dictated by the PN junction. In this diode, a thin PN junction region is formed between a lightly doped n-type semiconductor and a heavily doped p-type semiconductor. This junction behaves differently, depending on the direction of the applied voltage. If a voltage is applied in the forward direction, the current flows from the p-type to the n-type and is called the forward bias current. Conversely, when the voltage is applied in the reverse direction, the junction blocks the flow of current and is called the reverse bias current.

The current-voltage characteristics of the PN junction are described by two equations: the forward bias equation and the reverse bias equation. The junction\'s behavior under forward bias conditions is described by the diffusion equation, which defines the current of electrons as the product of electron mobility, the reverse saturation current, and their concentration gradient. The reverse bias voltage is controlled by two equations: the depletion layer equation, which describes the depletion of electrons as a function of the reverse bias voltage; and the Bandgap voltage equation, which defines the Zener breakdown voltage.

The SMBJ5944C/TR13 is a nice device for circuit protection, overvoltage protection, and attenuation applications. It features low forward voltage drop and high peak working power, making it suitable for a variety of electronic applications. It is reliable and offers maximum junction operating temperature and storage temperature range of -55° to +150°C. The PN junction behaviors of this diode can be described by two equations, the forward bias equation and the reverse bias equation, and other equations such as the diffusion equation and the Bandgap voltage equation.

The specific data is subject to PDF, and the above content is for reference