SMBJ45E3/TR13 Allicdata Electronics
Allicdata Part #:

SMBJ45E3/TR13-ND

Manufacturer Part#:

SMBJ45E3/TR13

Price: $ 0.16
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 45V 80.3V DO214AA
More Detail: N/A
DataSheet: SMBJ45E3/TR13 datasheetSMBJ45E3/TR13 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.14388
Stock 1000Can Ship Immediately
$ 0.16
Specifications
Current - Peak Pulse (10/1000µs): 7.5A
Base Part Number: SMBJ45
Supplier Device Package: SMBJ (DO-214AA)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Series: --
Voltage - Clamping (Max) @ Ipp: 80.3V
Voltage - Breakdown (Min): 50V
Voltage - Reverse Standoff (Typ): 45V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The SMBJ45E3/TR13 is a Pb-free, ultra-fast, unidirectional, bi-directional and surface mounting Transient Voltage Suppressor (TVS). It is manufactured using the latest Bi-Level protection circuits technology, which allows it to perform with the highest efficiency and superior surge capability. This device offers an excellent protection against transient over-voltage and abnormal voltage spikes caused by power cross coupled between input and output, grounding faults, and line noise. It has an ultra-fast response time, from 1 nanosecond to 10 nanoseconds, and contains internal Lithium battery protection.

The SMBJ45E3/TR13 is a TVS diode, which is an electronic component made of a diode, a protection resistor and a nonlinear resistor network. It is designed to provide protection to electrical components and systems from surges and spikes in voltage which can occur due to lightning strikes, power surges, or other disturbances. These components are used in applications such as telecommunications, power systems, automotive systems, and medical instruments. They are designed to withstand extreme environmental conditions and can be used in a variety of scenarios. The SMBJ45E3/TR13 is designed with a maximum stand-off voltage of 45V and a peak pulse power rating of 400W.

The working principle of a TVS diode is based on the avalanche breakdown phenomenon. When the TVS diode is exposed to a voltage above the breakdown voltage, the voltage causes electrons to flow across the junction and induce a current. This current leads to heat generation and further energy release in the form of light, sound and radiation. This energy further causes avalanche breakdown. At this point, current stops flowing and a high value of resistance is generated. This process quickly shuts off the current and stops further flow of the voltage.

The SMBJ45E3/TR13 TVS diode is mainly used in applications where transients need to be controlled. It is suitable for circuits which are connected to high speed buses which can be connected to multiple sources. It is also used in power supplies which are exposed to heavy duty applications such as clean energy solar inverters, DC-DC converters and power factor correction circuits. It is ideally suited for high surge current applications such as instruments and protection against static spin discharges.

The SMBJ45E3/TR13 TVS diode offers superior surge capability, allowing it to absorb large amount of energy, up to 400W, in a single pulse. It is designed with an ultra-fast response time, from 1 nanosecond to 10 nanoseconds. It contains internal Lithium protection, and its Pb-free design makes it suitable for a variety of applications.

The SMBJ45E3/TR13 TVS diode is a cost-efficient solution for applications requiring over-voltage protection, which offers superior surge capability and an ultra-fast response time. Its Pb-free design makes it suitable for a variety of applications and also provides better protection against circuit damage due to spikes in voltage.

The specific data is subject to PDF, and the above content is for reference

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