SMBJ4742CE3/TR13 Datasheet/PDFDiodes - Zener - Single
The SMBJ4542CE3/TR13 is a single zener diode which combines the functions of signal and protection with low dynamic resistance and avalanche breakdown characteristics. It is designed to be a high performance, low power, surface mounted diode in a variety of applications.
Applications
The SMBJ4542CE3/TR13 can be used in a wide range of applications, including signal and protection, overvoltage protection, power supply circuits, voltage and temperature sensing, surge protection and in transient voltage suppression. It is suitable for use in consumer electronics, such as computers, automotive and mobile equipment, AC/DC power supplies, battery chargers, LCD TV, monitors, and other electronic equipment.
Working Principle
The active element of the SMBJ4542CE3/TR13 is a Zener diode, which consist of two PN junction chips that are connected in series. When a reverse voltage is applied to the diode, a certain amount of current will flow, which is determined by the PN junction breakdown voltage. The breakdown voltage of the diode is determined by the bias voltage, or the voltage applied to the junction. The breakdown voltage of the SMBJ4542CE3/TR13 can range from 6.2V to 7.2V. Once the breakdown voltage is reached, the diode will start to conduct, and the current will continue to flow even when the applied voltage is not present. This current is known as the Zener current.
Advantages
The SMBJ4542CE3/TR13 offers a wide range of benefits, including low dynamic resistance, low stand-off voltage and fast recovery time, high power dissipation, high temperature and humidity resistance, non-repetitive peak surge current, and low capacitance. It is also able to withstand high voltages and currents, far greater than other similar devices.
Disadvantages
The SMBJ4542CE3/TR13 does have a few drawbacks, most notably its sensitivity to over-voltage. It is also vulnerable to temperature variations, which can cause instability in the diode\'s parameters. It also has a limited number of repetitions in transient voltage suppression and may be affected by ESD, requiring external protection if exposed to ESD.