SMBJ4761C/TR13

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The SMBJ4761C/TR13 is a single, planar, high power, low profile, zinc oxide based, avalanche diode with the common anode configuration which is capable of withstanding high handling and Thevenin equivalent voltage in applications; such as protecting circuits, preventing transients and overvoltages, and power management. It comes in an industry standard SOT-23 package and is available in a range of configurations including fixed, adjustable and thermally controlled.

The SMBJ4761C/TR13 utilizes a planar, zinc oxide based avalanche breakdown technology to provide high power handling capability and transient protection. The device’s poled cathode material has been designed to reduce or eliminate the effects of reverse leakage current, increasing the device’s power management efficiency for applications that require high power handling capability. The SMBJ4761C/TR13 also features a low profile design as a result of its very small size and low thermal resistance.

In terms of applications, the SMBJ4761C/TR13 is ideally suited for use in applications that require high surge current capability and transient protection, such as in power supplies, DC/DC converters, and cellular phone power management applications. The device can be used in the protection of systems against voltage spikes and transients, and can be used in the protection of circuits against over voltage conditions.

The working principle of the SMBJ4761C/TR13 is based on the Avalanche Breakdown Principle, also known as the Zener Breakdown Principle. This principle was discovered in 1924 by physicist Leo Esaki and relies on the injection of free electrons into the material’s lattice structure, when a sufficiently high electric field is applied. In the avalanche breakdown process, the resulting increase in the carrier concentration results in a decrease of the band gap and the device’s forward current increases exponentially with an increase in the applied voltage.

In order to operate the device, a zener voltage must be applied in forward bias conditions from the device’s anode to its cathode. When the applied voltage reaches the device’s zener voltage, it enters into its zener region and allows for the device’s reverse current to start flowing. The reverse current is usually limited to a maximum of 10mA for the SMBJ4761C/TR13, making it an ideal choice for use in applications that do not require high reverse currents.

The SMBJ4761C/TR13 is an excellent choice for use in applications that require high power handling capabilities and transient protection. Its low profile design and wide range of configurations make it an ideal choice for use in power management solutions, and its avalanche breakdown principle ensures its high power handling capabilities. The device is capable of withstanding high handling and Thevenin equivalent voltages and its reverse leakage current is kept to a minimum. Overall, the SMBJ4761C/TR13 is a versatile and reliable solution for many applications.

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