SMBJ5.0CD-M3/I Allicdata Electronics
Allicdata Part #:

SMBJ5.0CD-M3/IGITR-ND

Manufacturer Part#:

SMBJ5.0CD-M3/I

Price: $ 0.10
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 5V 9.1V DO214AA
More Detail: N/A
DataSheet: SMBJ5.0CD-M3/I datasheetSMBJ5.0CD-M3/I Datasheet/PDF
Quantity: 9600
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3200 +: $ 0.08732
6400 +: $ 0.08203
9600 +: $ 0.07673
32000 +: $ 0.07056
Stock 9600Can Ship Immediately
$ 0.1
Specifications
Voltage - Clamping (Max) @ Ipp: 9.1V
Supplier Device Package: DO-214AA (SMBJ)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 65.9A
Series: TransZorb®
Voltage - Breakdown (Min): 6.5V
Voltage - Reverse Standoff (Typ): 5V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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SMBSJ5.0CD-M3/I is a TVS diode, commonly used for overvoltage protection and transients protection. This diode has a breakdown voltage of 5.0V and a maximum uni-directional surge current of 3.0A.

The SMBSJ5.0CD-M3/I diode can be used in a variety of applications requiring overvoltage protection such as electronic power supplies, transceivers, telecommunication, and automotive electronics. It is especially suitable for automotive electronics due to its fast response time and ability to absorb repetitive surges.

The SMBSJ5.0CD-M3/I diode has a simple working principle based on the junction barrier principle. When an external electric field is applied, electrons and holes in the semiconductor accumulate at the junction between the N-type and P-type sides of the diode. This creates an electric field across the diode that is strong enough to break down the PN junction. When this happens, the diode closes and current begins to flow through it.

The SMBSJ5.0CD-M3/I diode has a peak reverse voltage (VRM) of 5V, a peak reverse current (IRM) of 0.5A, and a peak power dissipation (PRRM) of 3.0A. It is capable of handling surge currents of up to 3.0A, making it perfect for applications requiring overvoltage protection. The diode is also capable of handling peak repetitive surges of up to 15A.

The SMBSJ5.0CD-M3/I also has a reverse body diode, or clamp diode, which helps it to protect against ESD. This diode helps to protect the device from high voltage transients by allowing current to flow in the reverse direction during a transient event. The reverse body diode also provides protection from overvoltages up to a few kilovolts.

The SMBSJ5.0CD-M3/I diode is capable of protecting sensitive electronics from ESD and overvoltage transients. Its simple working principle and surge protection capabilities make it ideal for a variety of applications. With its robust construction, it is capable of handling high surge currents and multiple repetitive surges, making it a great choice for overvoltage protection.

The specific data is subject to PDF, and the above content is for reference

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