SMBJ5339B-TP

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The SMBJ5339B-TP is a single Zener diode that is typically used as a transient voltage suppressor, but can also be used in a variety of other applications. This diode is made of an epitaxial silicon substrate and has an encapsulation of a plastic case with a glass-passivated junction for improved electrical performance.

In some applications, the SMBJ5339B-TP is used in conjunction with other semiconductor devices to protect portable media players, power supply controllers, and other consumer electronics from electrical transients. The use of a single Zener diode in this manner can provide a robust solution for short-term voltage overshoots. In other applications, the SMBJ5339B-TP can be employed in audio/RF circuitry to suppress electrical noise and provide EMI filtering.

The working principle of the SMBJ5339B-TP is based on the phenomenon of reverse breakdown that is caused by the presence of a potential gradient within a PN junction. When a voltage greater than the breakdown voltage of a Zener diode is applied, an avalanche breakdown occurs, allowing current to flow in the reverse direction. As a result, the voltage across the diode clamps to the breakdown voltage. The surge suppression characteristics of the SMBJ5339B-TP can protect against transient electrical overvoltages up to 600W peak pulse power and working voltages up to 200 volts.

The SMBJ5339B-TP has a very low reverse leakage current, making it suitable for use in applications such as memory and clock circuits, where it is important to ensure that the voltage across the diode does not change with time. The diode also offers excellent surge handling capability and fast response time, making it suitable for a wide variety of transient voltage suppression applications.

In summary, the SMBJ5339B-TP is a single Zener diode that is suitable for use in a variety of applications. It can be used in conjunction with other semiconductor devices to provide protection from transients, can be used in audio/RF circuits to suppress electrical noise, and provides excellent surge handling capability and fast response time. The diode also has a very low reverse leakage current and can be used in high-precision applications such as those requiring memory and clock circuits.

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