SMBJ5362B-TP Allicdata Electronics
Allicdata Part #:

SMBJ5362B-TPMSTR-ND

Manufacturer Part#:

SMBJ5362B-TP

Price: $ 0.16
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: DIODE ZENER 28V 5W DO214AA
More Detail: Zener Diode 28V 5W ±5% Surface Mount DO-214AA (SMB...
DataSheet: SMBJ5362B-TP datasheetSMBJ5362B-TP Datasheet/PDF
Quantity: 9000
3000 +: $ 0.15155
6000 +: $ 0.14110
15000 +: $ 0.13936
Stock 9000Can Ship Immediately
$ 0.16
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 28V
Tolerance: ±5%
Power - Max: 5W
Impedance (Max) (Zzt): 6 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 21.2V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Base Part Number: SMBJ5362
Description

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The SMBJ5362B-TP is a zener diode and is classified as a single diode. The SMBJ5362B-TP is designed for voltage regulation, allowing for a reverse breakdown voltage for a high-power switching applications. It is suitable for power supply applications using high-switching frequency, such as DC-DC converters, high-efficiency voltage regulator modules (VRMs), secondary side monitoring circuits, and automotive power supplies.

The SMBJ5362B-TP features a lean design and low switching losses. It has a reverse breakdown voltage of 5.6V, a low forward voltage of 0.72V, an operating temperature range of -55°C to 150°C, and a power dissipation maximum of 600mW. The diode is packaged in a DO-213AB package, which is a package that is optimized for surface mount applications. The diode has a high impulse withstanding capability and provides good stability against spike transient.

The working principle of the SMBJ5362B-TP is relatively straightforward. The diode is connected in a reverse-biased configuration, which means that the cathode is connected to the higher voltage, and the anode is connected to the lower voltage. When the voltage across the diode exceeds the nominal breakdown voltage (5.6V for the SMBJ5362B-TP), the diode will start conducting. This allows the diode to regulate the voltage by limiting the amount of current that can flow in the circuit. This helps to protect the circuit from the risk of excessive current and thermal runaway.

The SMBJ5362B-TP is used for a variety of different applications, such as in a high-efficiency voltage regulator module (VRM) circuit. VRM circuits are used to regulate the output voltage of a power supply, and the SMBJ5362B-TP is used to ensure that the output voltage does not exceed the nominal breakdown voltage. This helps to ensure that the circuit is protected against excessive current and thermal runaway. The diode can also be used in automotive power supplies, secondary side monitoring circuits, and DC-DC converters.

In conclusion, the SMBJ5362B-TP is a single zener diode that is used for voltage regulation in high-power switching applications. It has a reverse breakdown voltage of 5.6V and a low forward voltage of 0.72V, and is packaged in a DO-213AB package that is optimized for surface mount applications. It is suitable for use in a variety of different applications, such as in VRM circuits, secondary side monitoring circuits, automotive power supplies, and DC-DC converters. The diode works by allowing for a reverse breakdown voltage for a high-power switching application, which helps to regulate the voltage in the circuit and protect against excessive current and thermal runaway.

The specific data is subject to PDF, and the above content is for reference

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