SMBJ5367B-TP

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Diodes - Zener - Single: SMBJ5367B-TP Application Field and Working Principle

One of the most common applications for Diodes - Zener - Singles is for their use in voltage regulation circuits. This type of device is often found in low-noise, low-temperature and low-humidity environments due to its excellent performance in these conditions. The SMBJ5367B-TP is a Zener single, which is a three-terminal semiconductor device that is capable of regulating an incoming voltage by utilizing avalanche breakdown characteristics. This type of diode is used for a wide variety of applications, such as for stabilizing voltages, boosting circuit performance, and increasing voltage stability.

The SMBJ5367B-TP is a low-noise, high-performance device that is designed to deliver highly reliable power solutions. It has a reverse breakdown voltage ranging from 5.1V to to 376V, with a maximum peak repetitive reverse voltage up to 1.2kV. In addition, it has a low temperature coefficient of less than 0.5mV/˚C. Additionally, this device can dissipate up to 5W and is also able to handle high peak forward currents up to 6A.

The SMBJ5367B-TP is commonly used for voltage regulation and voltage stabilization in a wide range of applications. These include power supplies, motor starters, home appliances, and other equipment where reliable and stable power is necessary. In addition, it is also used in automotive electronics, medical devices, lighting systems, and other electronics that require reliable and stable power.

The working principle of the SMBJ5367B-TP is based on the behavior of its reverse breakdown region. When the reverse voltage across the diode is increased above the device\'s reverse breakdown voltage, there is an avalanche breakdown. This is caused by the electrons and holes in the device\'s junction becoming accelerated, colliding with each other to create electron-hole pairs, which are then swept away by the electric field, resulting in an increase in current through the diode.

The breakdown voltage of the SMBJ5367B-TP is determined by its doping concentration and junction area, with the reverse breakdown voltage being a function of the junction area. The current through the diode is then directly proportional to the reverse voltage across the junction, with the diode acting like a switch in the reverse breakdown region, allowing current to flow when the voltage exceeds the breakdown voltage.

Lastly, the SMBJ5367B-TP has an excellent immunity to surge currents and noise, making it the ideal diode for voltage regulation applications. Its low leakage current, low on-resistance, and its excellent reverse power dissipation characteristics make this an ideal choice for a variety of application. With its robust construction, reliable performance, and great immunity to surge currents and noise, you can be assured that the SMBJ5367B-TP will be a reliable and dependable partner for your voltage regulation needs.

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