SMBJ5381B/TR13 Allicdata Electronics
Allicdata Part #:

SMBJ5381B/TR13-ND

Manufacturer Part#:

SMBJ5381B/TR13

Price: $ 0.88
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 130V 5W SMBJ
More Detail: Zener Diode 130V 5W ±5% Surface Mount SMBJ (DO-214...
DataSheet: SMBJ5381B/TR13 datasheetSMBJ5381B/TR13 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.78586
Stock 1000Can Ship Immediately
$ 0.88
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 130V
Tolerance: ±5%
Power - Max: 5W
Impedance (Max) (Zzt): 190 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 93.6V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMBJ (DO-214AA)
Base Part Number: SMBJ5381
Description

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A SMBJ5381B/TR13 is a single Zener diode which is designed for high power, transient and EMI/RFI suppression applications. Its major function is to protect the connected circuit from voltage fluctuations and spikes, and in addition to this, it also functions as an impedance element for low frequency control signals. This type of diode has a range of breakdown voltages from 13.1V up to 32V with a power rating of 5W.

Characteristics

The SMBJ5381B/TR13 Zener Diode basically consists of an anode and a cathode. The special characteristics of this diode are mainly defined by its zener voltage rating which is indicated by the second part of its name. In this example the part number indicates that the breakdown voltage is 13.1V. The anode has the higher voltage while the cathode has the lower voltage.

Application Fields

The SMBJ5381B/TR13 diode can find its applications in many places depending on the specific application need. It is mainly used to protect circuits from voltage fluctuations and spikes, and from electrical noise induced from external sources. It is also used in numerous power supply circuits as well as low frequency control signal applications, such as electronic thermostats and dimmers.

Working Principle

The basic working principle of the SMBJ5381B/TR13 diode is based on the PN junction. When there is reverse bias across the diode, the electrons and holes which are located on either side of the junction are repelled by one another. This repelling force creates an electric field called the depletion layer which effectively blocks any current from flowing through the diode. The width of the depletion layer is determined by the voltage applied across the junction, which is known as the breakdown voltage.

In the forward bias, the electric fields created by the electrons and holes are attractive, and they are allowed to diffuse across the junction. As the results, a current is allowed to flow through the diode.

When the electric field is strong enough, the electrons are forced to pass across the junction, creating an avalanche breakdown which occurs when an increased voltage is applied to the junction. The breakdown voltage, which is usually specified on the part number, determines the maximum voltage at which the avalanche breakdown should occur and protect the connected circuit from any damage.

Conclusion

In conclusion, the SMBJ5381B/TR13 diode is an ideal component for many applications, due to its robustness and wide range of breakdown voltage options. It helps protect connected circuits from voltage fluctuations and spikes, as well as noise pick up from external sources. The diode works based on the PN junction and is capable of providing excellent noise and protection performance in many different applications.

The specific data is subject to PDF, and the above content is for reference

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