SMBJ5382BE3/TR13

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Diodes are electric components which are capable of carrying current in only one direction. Traditionally, diodes were made out of a semiconductor material such as silicon and had two distinct regions, a P-N junction, which are created when two differently doped regions of a semiconductor are brought together. When an external voltage is applied across the P-N junction, it allows an electric current to flow in only one direction and the diode acts as a barrier for the opposite direction. Diodes can be used for many functions including providing rectification, voltage regulation and to limit current. One variant of the diode is the Zener diode, which is a specific type of diode that is capable of conducting current in both directions when a certain threshold voltage is reached and operates in reverse breakdown. The SMBJ5382BE3/TR13 is a single Zener diode, typically found in circuit designs for suppression and transient voltage applications.

The SMBJ5382BE3/TR13 Pb-free, RoHS-compliant single Zener diode is designed to perform a variety of functions including general-purpose protection and clamping. The diode is made up of silicon material with a passivated anode and cathode construction and uses an epoxy resin material offering excellent heat resistance. The SMBJ5382BE3/TR13 is designed to offer a high reverse breakdown voltage of 5.5 Volts with a maximum power dissipation of 300mW in a small SOD-123 package.

The main application fields of the SMBJ5382BE3/TR13 are in circuit designs which are used for protection from voltage transients and to regulate voltages in a wide range of power management and other industrial applications. The Zener diode has a very low impendence that is unaffected by temperature, making it ideal for use in clamping and voltage regulation circuits. This diode is often found in solar energy systems, automotive electronics and telecommunications equipment.

The working principle of the SMBJ5382BE3/TR13 is based on the Zener breakdown effect. When a reverse voltage is applied to the P-N junction of the diode, its breakdown voltage is reached, thus allowing current to flow in both directions. This is known as the Zener breakdown process and occurs due to electrons being accelerated to the junction barrier and thus creating an avalanche breakdown. This causes a large number of electrons to flow through the diode and thus allowing current to flow in both directions. Once the breakdown voltage is reached, the current will remain constant with an increase in reverse voltage.

The SMBJ5382BE3/TR13 single Zener diode is designed for a variety of circuit designs which require protection from voltage transients and voltage regulation. Its reverse breakdown voltage of 5.5 Volts and power dissipation of 300mW makes it an ideal choice for many applications, including those in solar energy systems and automotive electronics. Its epoxy resin construction and small form factor SOD-123 package also make it an attractive choice for many circuit designs. The SMBJ5382BE3/TR13 is capable of operating in Zener breakdown process and thus has the ability to regulate and suppress voltages.

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