SMBJ5938B/TR13 Allicdata Electronics
Allicdata Part #:

SMBJ5938B/TR13-ND

Manufacturer Part#:

SMBJ5938B/TR13

Price: $ 0.83
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 36V 2W SMBJ
More Detail: Zener Diode 36V 2W ±5% Surface Mount SMBJ (DO-214A...
DataSheet: SMBJ5938B/TR13 datasheetSMBJ5938B/TR13 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.74122
Stock 1000Can Ship Immediately
$ 0.83
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 36V
Tolerance: ±5%
Power - Max: 2W
Impedance (Max) (Zzt): 38 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 27.4V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMBJ (DO-214AA)
Base Part Number: SMBJ5938
Description

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The SMBJ5938B/TR13 is a single Zener diode designed for protecting any modern electronics equipment from transient voltages. It is a reliable and cost-effective way to protect circuits from surges, spikes and other brief, unanticipated high-voltage events. The device is rated for a peak pulse power of 600W, an operating temperature range of -55°C to +150°C, and an average rectified power dissipation of 1.2W.

The SMBJ5938B/TR13 has a variety of applications and when it comes to its functioning, it works on the principle of breakdown voltage. This is the voltage at which the diode allows electrons to pass through it and conduct current. At this voltage, the diode gets turned on and starts to conduct and that\'s when it starts to protect the circuit.

The diode is heavily used in high-density power control circuits and automotive electronics to protect circuits from the effects of overvoltages. It is also used to suppress high-frequency switching transients in inverters and converters. Its low thermal resistance allows it to be used in a variety of application areas.

The SMBJ5938B/TR13 is an unidirectional Zener diode so it allows current to only flow in one direction. It is composed of a p-n junction and the breakdown voltage is determined by the doping concentration of the p-n junction. The device has a very high reverse breakdown voltage of 59V and a reverse leakage current of 50µA at 25°C.

Because of its wide range of applications and its ability to protect against transient voltages and surges, the SMBJ5938B/TR13 is an ideal choice for any project requiring high-density power control circuits and automotive electronics. Its low thermal resistance and high breakdown voltage make it a reliable choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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