| Allicdata Part #: | SMBJ5951C/TR13-ND |
| Manufacturer Part#: |
SMBJ5951C/TR13 |
| Price: | $ 1.09 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | DIODE ZENER 120V 2W SMBJ |
| More Detail: | Zener Diode 120V 2W ±2% Surface Mount SMBJ (DO-214... |
| DataSheet: |  SMBJ5951C/TR13 Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.97902 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 120V |
| Tolerance: | ±2% |
| Power - Max: | 2W |
| Impedance (Max) (Zzt): | 380 Ohms |
| Current - Reverse Leakage @ Vr: | 1µA @ 91.2V |
| Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
| Operating Temperature: | -65°C ~ 150°C |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-214AA, SMB |
| Supplier Device Package: | SMBJ (DO-214AA) |
| Base Part Number: | SMBJ5951 |
Description
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SMBJ5951C/TR13 is a single zener diode, which is widely used in voltage regulation, switching, and clamping applications. It’s suitable for applications for which low power consumption and excellent temperature stability are important. The diode has a low operating current of 3mA and a breakdown voltage of 41V. It also has a junction capacitance of 3.5pF, a maximum reverse current of 500µA, and a power dissipation of 150mW.
The SMBJ5951C/TR13 features an ultra-low forward voltage drop, making it ideal for low power applications. The diode has an impressive reverse breakdown voltage, making it suitable for voltage regulation and switching applications. Additionally, it has a low on-state voltage drop, which is ideal for switching applications. Its high surge current characteristics make it suitable for surge protection applications. The diode also has excellent temperature stability, which is ideal for applications where temperature is a concern.
The working principle of the SMBJ5951C/TR13 is based on PN junction formation. When an anode voltage is applied, a depletion layer is created on the anode side due to the depletion of the electrons, while a built-in electric field constitutes an accumulation layer on the cathode side of the junction. This electric field is responsible for the breakdown voltage of the diode, which is 41V in this case. The diode also has an avalanche proviso, which enables it to operate in avalanche breakdown mode at higher voltages.
The SMBJ5951C/TR13 is mainly used in voltage regulation and switching applications where a low operating current, low forward voltage drop, and temperature stability are important. It is also suitable for surge protection applications due to its high surge current characteristics. The diode is ideal for use in automotive and telecom applications where the supply voltage must be precisely controlled.
In conclusion, the SMBJ5951C/TR13 is a single zener diode that is suitable for applications where low power consumption and excellent temperature stability are important. The diode has a low operating current of 3mA and a breakdown voltage of 41V. It has an ultra-low forward voltage drop, making it ideal for low power applications, and its high surge current characteristics make it suitable for surge protection applications. The SMBJ5951C/TR13 is mainly used in voltage regulation and switching applications, and in automotive and telecom applications where the supply voltage must be precisely controlled.
The specific data is subject to PDF, and the above content is for reference
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