SMBJ6.5CAE3/TR13 Allicdata Electronics
Allicdata Part #:

SMBJ6.5CAE3/TR13-ND

Manufacturer Part#:

SMBJ6.5CAE3/TR13

Price: $ 0.16
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 6.5V 11.2V DO214AA
More Detail: N/A
DataSheet: SMBJ6.5CAE3/TR13 datasheetSMBJ6.5CAE3/TR13 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.15347
Stock 1000Can Ship Immediately
$ 0.16
Specifications
Current - Peak Pulse (10/1000µs): 53.6A
Base Part Number: SMBJ6.5
Supplier Device Package: SMBJ (DO-214AA)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Series: --
Voltage - Clamping (Max) @ Ipp: 11.2V
Voltage - Breakdown (Min): 7.22V
Voltage - Reverse Standoff (Typ): 6.5V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS, or transient voltage suppression, diodes are devices used to protect electrical components, most commonly sensitive semiconductor circuitry, from voltage fluctuations, transient surges, and other forms of over-voltage. They are particularly important for preventing damage caused by electrostatic discharge (ESD). The SMBJ6.5CAE3/TR13 is a unidirectional TVS diode, most commonly used in applications that require fast response time and high breakdown voltage. In this article, we’ll explore the application field of the SMBJ6.5CAE3/TR13, as well as its working principle.

The SMBJ6.5CAE3/TR13 is designed with a peak reverse voltage (PV) of 6.5 volts, a peak pulse power dissipation of 2.5 watts, and a response time of 10 nanoseconds. It is well-suited for use in a variety of applications, including computing and mobile devices, as well as medical, consumer, and automotive electronic products. The device’s extremely fast response time makes it well-suited for use in environments that require the most dependable surge protection available, such as those encountered by heavy equipment, industrial environments, and high-voltage circuits.

In addition to its application field, it is important to understand the basic working principle of the SMBJ6.5CAE3/TR13 to gain a better understanding of how it operates. As a unidirectional TVS diode, this device uses an avalanche breakdown mechanism to protect circuits against ESD and other forms of over-voltage. When an over-voltage is detected, the diode’s built-in Zener region becomes highly conductive and quickly diverts the current away from the protected circuit. This greatly reduces the potential for damage caused by the overvoltage. Once the overvoltage has been exhausted, the TVS diode rapidly returns to its non-conductive state, allowing the protected circuit to resume normal operation.

The SMBJ6.5CAE3/TR13 also offers a variety of features and benefits, such as low-capacitance for minimal signal distortion and enhanced ESD protection, low power dissipation for extended component life, and vibration-resistant construction for use in harsh environments. All of these features make it an ideal device for use in a wide range of applications, from consumer electronics to automotive applications, as well as many industrial settings.

In summary, the SMBJ6.5CAE3/TR13 is a unidirectional TVS diode designed for fast response and high breakdown voltage. It is well-suited for use in a variety of applications, from consumer electronics to automotive applications, as well as many industrial settings. The device is also designed with a variety of features, such as low-capacitance for minimal signal distortion and enhanced ESD protection, low power dissipation for extended component life, and vibration-resistant construction for use in harsh environments. By understanding its application field and working principle, engineers and designers can make informed choices with respect to selecting the most appropriate TVS diode for a given application.

The specific data is subject to PDF, and the above content is for reference

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