SMBJ60CD-M3/H

Voltage - Clamping (Max) @ Ipp:	95.5V
Supplier Device Package:	DO-214AA (SMBJ)
Package / Case:	DO-214AA, SMB
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Capacitance @ Frequency:	--
Applications:	General Purpose
Power Line Protection:	No
Power - Peak Pulse:	600W
Current - Peak Pulse (10/1000µs):	6.28A
Series:	TransZorb®
Voltage - Breakdown (Min):	67.7V
Voltage - Reverse Standoff (Typ):	60V
Bidirectional Channels:	1
Type:	Zener
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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SMBJ60CD-M3/H TVS - Diodes Application Field and Working Principle

Surge protection components are extremely important for power related electronics in terms of safety and reliability. The invention of Surge Protection Device (SPD) has made it possible to protect electronic devices from voltage sag, surge, and other forms of over-voltage. The SMBJ60CD-M3/H TVS - Diodes are composed of TVS rectifier diodes and are applied to the protection of power lines from over voltage. In this article, we will discuss its application field and working principle. The SMBJ60CD-M3/H TVS - Diodes are widely used in automotive electronics, and can provide over-voltage protection up to 600W. It is widely used for over-voltage protection of the circuit with working voltage from 12V to 400V. The device has a low capacitance and fast response time, so that it can respond to over-voltage faster than other protection components. Furthermore, it can also be applied as a lightning protector for communication lines.The working principle behind the SMBJ60CD-M3/H TVS diode is that when voltage is applied, current flows through the device from anode to cathode. Under normal operating conditions, the voltage across the diode is kept at a fixed value, allowing it to function as a voltage regulator. However, when the voltage across the diode exceeds the breakdown voltage of the device, a large amount of surge current is generated. This surge current will protect the circuit by diverting the excess voltage away from the vulnerable components.The device consists of a high doping layer, a low doping layer, and a metallized contact layer. The high doping layer is made up of heavily doped n-type semiconductor material, while the low doping layer is made up of lightly doped p-type semiconductor material. These two layers are insulation-faced and sandwiched between them is a metallized contact layer for connection and conducting current.When the applied voltage reaches the breakdown voltage of the SMBJ60CD-M3/H TVS -Diode, current is rapidly diverted away from the vulnerable components, thus protecting the circuit.The SMBJ60CD-M3/H TVS - Diodes are widely used in power electronics due to their fast and efficient response. Furthermore, they are also used as overvoltage protection devices in automotive electronics, communication lines, telecom systems, and various other applications. As it is cost-efficient, it can be used in various applications, making it an ideal choice for protection against overvoltage. In conclusion, the SMBJ60CD-M3/H TVS - Diodes provide overvoltage protection for power lines in a wide variety of applications. It can respond fast to overvoltage, thus providing protection to vulnerable components in the circuit. Moreover, it can be used as a voltage regulator as it operates at a fixed voltage. Furthermore, it is cost-efficient and can be used in many applications, making it an ideal choice for protection against overvoltage.

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