SMBJ85A-E3/52

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TVS diodes provide an important technology for protection against transient voltage on electrical circuits. The SMBJ85A-E3/52 is a unidirectional transient voltage suppressor (TVS) that uses silicon avalanche breakdown technology to protect sensitive electronic components from damage due to overvoltage transients. This diode is designed for high-performance circuit protection and is ideal for positive or negative transients due to power supply, signal line, and other applications.

It is designed for printed circuit board (PCB) mounting. The SMBJ85A-E3/52 is qualified in accordance with MIL-STD-202F, method 213, condition A. This TVS diode has fast response times, high surge capability, and low leakage current. Its high power capability makes it suitable for applications where an inductor may not provide the necessary protection.

The SMBJ85A-E3/52 has an operating junction temperature range of -55 − +175 °C, working at 10 mA, with a VBR(min) of 85V and a voltage breakdown rating of 52 V. It features an impressive surge current capability of up to 655 A (8/20 µs), a reverse thermal breakdown voltage of 130 V, and a low capacitance of 4.2 pF. The package size is 0.2 inches x 0.2 inches (5.08 mm x 5.08 mm), with a standoff height of 0.05 inches. The low thermal resistance allows the device to dissipate up to 1.2 W at an ambient temperature of 25°C.

The SMBJ85A-E3/52 can be used in a wide variety of applications for voltage, current, and EMI/RFI noise suppression. It can be used in hard drive and other high-speed data communications circuitry, as well as in automotive, computer, communications, consumer electronics, industrial, and other applications. It is also used in switching power supplies and load switches, as well as in aircraft systems and instrumentation.

The working principle of the SMBJ85A-E3/52 is to protect delicate electronic circuits from overvoltage transients. It is a unidirectional protection device which works by redirecting the current flow to ground. When the device voltage exceeds its breakdown voltage, the current will flow from the anode to the cathode via the breakdown avalanche region in the diode. This current is then redirected to ground and dissipated. The SMBJ85A-E3/52 also has a low capacitance of 4.2 pF which helps reduce EMI/RFI noise.

In conclusion, the SMBJ85A-E3/52 is an important device for circuit protection. It\'s high surge capability makes it suitable for applications that require maximum protection. The low thermal resistance and low capacitance of the diode make it ideal for high-speed data communications, automotive, computer, industrial and other applications. Its working principle involves redirecting the current flow to ground when the device voltage exceeds its breakdown voltage, providing excellent protection against transient voltages.

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