SMCJ10A-TR

Transient Voltage Suppression (TVS) Diodes are electronic components used to protect sensitive electronic circuits from sharp peaks of voltage caused by electrostatic discharge (ESD). The SMCJ10A-TR is a monolithic silicon Avalanche TVS Diode. It offers excellent clamping performances over a broad voltage range from 5.0 Volts up to 170 Volts and a broad operating temperature range of -65°C to +175°C.

The SMCJ10A-TR is designed to handle a wide range of unidirectional and bidirectional transient overvoltage including: electrostatic discharge, load dump, pulse power supply and other transients that may occur on a power supply line. It is ideal for use in communication systems, automotive applications, and any other applications that have to meet the requirements of environmental and safety standards.

The SMCJ10A-TR has a built-in 33 Ohms series resistance and a very fast response time, in the order of a few nanoseconds, to protect sensitive microprocessors and I/O interfaces from very fast switching transients. It offers very low leakage current, at a maximum of 0.25 µA, which makes it suitable for logic level protection applications. Its low inductance reduces to a minimum EMI and its low capacitance reduces the risk of signal distortion.

The working principle of the SMCJ10A-TR is based on a Zener Diode junction characteristic, which creates an internal Avalanche breakdown phenomenon once the device reaches the breakdown voltage. This phenomenon causes a very fast clamping response that limits the peak voltage across the device. The whole process occurs in very few nanoseconds and helps to protect sensitive circuits without adversely affecting them.

The SMCJ10A-TR is also RoHS compliant and has a low profile, maximizing circuit design flexibility. To sum up, its characteristics makes it an ideal solution for hundreds of applications, particularly as a very reliable protection device for sensitive, high-value electronic circuits.