SMCJ20E3/TR13 Circuit Protection

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TVS diodes are devices used to protect other electronic components from overvoltage transients. The SMCJ20E3/TR13 is a unidirectional TVS diode used to protect sensitive electronics from transient voltage events. This article will discuss the application field and working principle of the SMCJ20E3/TR13.

The SMCJ20E3/TR13 is designed to handle high transient pulse power of up to 115 watts of peak power at 8/20µs. It is specifically designed to be used in the protection of low-voltage, low-power portable electronic devices from high energy surges and electrostatic discharge events. The device features exceptional clamping performance, low leakage current of 10μA and a low response time.

The primary application areas of the SMCJ20E3/TR13 are digital communication devices, electronic controls, automotive electronics, computers and peripherals, and consumer electronics. The device is also well-suited for use in harsh industrial environments, such as medical and aerospace applications, due to its high surge capability, low power consumption, and fast response time.

The SMCJ20E3/TR13 is designed to reduce the energy of the transient voltage spikes. The device utilizes an integrated diode array and Zener diode structures to provide a high-speed release of stored charge to the ground potential when the voltage potential reaches the breakdown voltage. The operation of the SMCJ20E3/TR13 is based on the breakdown voltage of 18V. When the voltage potential exceeds this threshold, the device will conduct current from the transient source to the ground potential and limit the harmful effects of the transient voltage.

The SMCJ20E3/TR13 also includes reverse leakage current blocking capabilities. The integrated Zener barrier separates the diode array from the TVS diode. This prevents the current from the low voltage source from entering the input of the TVS diode and causing possible damage.

The SMCJ20E3/TR13 is a unidirectional TVS diode designed to protect sensitive electronic components from overvoltage transients. Its high surge capability, low power consumption, low leakage current, and fast response time make it suitable for use in digital communication devices, automotive electronics, computers and peripherals, and consumer electronics, as well as high-end industrial applications. The device utilizes an integrated diode array and Zener diode structure to provide a high-speed release of stored charge to the ground potential when the voltage potential reaches the breakdown voltage, and includes reverse leakage current blocking capabilities.

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